MRF19085LR5

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MRF19085LR5 is a RF Mosfet. It is a 45W LDMOS transistors that are suitable for applications in the 800 to 850 MHz frequency range. It is used in mobile radio, broadband, radio broadcast and digital radio applications. The gate is protected against Electro-Static Discharge (ESD).This device offers a power gain of 14 dB @ 850MHz and 10dB @ 800MHz with a high associated gain flatness and a low noise figure.

Application Field

The MRF19085LR5 is commonly employed in broadband, mobile radio, radio broadcast, and digital radio applications, with a frequency range of 800-850MHz. It is ideal for use in CDMA plus GSM applications, and is suitable for use as drive amplifiers in both transmitter and receiver applications.

Working Principle

At its simplest level, the Mosfet works by having a voltage applied to its Gate in order to create a channel between its Source and Drain. It works in a similar way to a conventional transistor, but with the gate voltage controlling the effective channel width between the Source and the Drain, thus controlling the current through the channel.

When the channel is "open" (a wide channel), the voltage applied to the gate has a positive charge and current can pass through easily. On the other hand, when the channel is closed (a narrow channel), the gate voltage has a negative charge, which stops current from passing through.

This technology makes it possible for the Mosfet to operate at very high frequencies, as switching speeds can reach the GHz range. This makes it ideal for use in communications, where high frequency signals are required.

The MRF19085LR5 also benefits from a high output power, which makes it suitable for use as a power amplifier in base station transmitter applications. It is also capable of achieving a high associated gain flatness and low noise figure, which are important requirements for most radio transmission and reception applications.

Overall, the MRF19085LR5 is an excellent device for applications in the 800 to 850 MHz frequency range. It offers high power gains, high associated gain flatness and low noise figure, and is suitable for use in base station transmitters, drive amplifiers and mobile radio applications.

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