MSE1PB-M3/89A Discrete Semiconductor Products |
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Allicdata Part #: | MSE1PB-M3/89AGITR-ND |
Manufacturer Part#: |
MSE1PB-M3/89A |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A MICROSMP |
More Detail: | Diode Standard 100V 1A Surface Mount MicroSMP (DO-... |
DataSheet: | MSE1PB-M3/89A Datasheet/PDF |
Quantity: | 1000 |
4500 +: | $ 0.04184 |
9000 +: | $ 0.03638 |
13500 +: | $ 0.03093 |
31500 +: | $ 0.02911 |
112500 +: | $ 0.02426 |
Series: | eSMP® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 780ns |
Current - Reverse Leakage @ Vr: | 1µA @ 100V |
Capacitance @ Vr, F: | 5pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | MicroSMP |
Supplier Device Package: | MicroSMP (DO-219AD) |
Operating Temperature - Junction: | -55°C ~ 175°C |
Base Part Number: | MSE1P |
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The MSE1PB-M3/89A is a single rectifier diode that can be used for a variety of applications. It is a high power diode suitable for a wide range of power applications and commonly used in electronic circuits.
This rectifier diode has a maximum power dissipation of 1000V, a forward voltage drop (VF) of 2.25 V, and an operating temperature range from -55 to +175 C. The low forward voltage drop and the wide temperature range make it suitable for many applications where efficiency and reliability are important. It is also available in a wide range of package types to suit the application.
The MSE1PB-M3/89A is typically used in power supply and DC power grid applications. It is a very reliable and efficient rectifier diode, and its wide temperature range makes it suitable for a variety of applications. It is commonly used in battery chargers, switching power supplies, and AC/DC converters.
The working principle of the MSE1PB-M3/89A is quite simple. It is a single junction P-type rectifier diode which conducts current when the anode is more positive than the cathode. When a voltage is applied, the diode begins to conduct as the anode is more positive than the cathode. As the applied voltage increases, the current through the diode also increases, until it reaches its maximum current rating. As the voltage decreases, the diode stops conducting until the voltage drops below the forward voltage drop (VF) of the diode.
The MSE1PB-M3/89A can be used in both AC and DC circuits, as it can deal with a wide range of voltage and current levels. The major advantage of using a rectifier diode is its low forward voltage drop and its wide temperature range. The wide temperature range makes it an ideal choice for many applications, as it can operate in high temperature environments. Additionally, the diode\'s low forward voltage drop helps to reduce power losses in the circuit and increases efficiency.
Apart from its obvious use as a rectifier diode, the MSE1PB-M3/89A also has some other uses. It can be used as a surge suppression device, as it can withstand voltages up to 1000V. Additionally, it is also used as a power rectification element in power semiconductor devices. The high voltage characteristic of the diode makes it suitable to use in high power applications, such as radiofrequency and powermicrowave systems.
In conclusion, the MSE1PB-M3/89A is a reliable and efficient rectifier diode that can be used for a variety of applications. It has a wide temperature range and a low forward voltage drop, making it an ideal choice for many applications. Additionally, it can be used as a surge suppression device, and as a power rectification element in power semiconductor devices. The MSE1PB-M3/89A shows great potential in the world of electronic applications.
The specific data is subject to PDF, and the above content is for reference
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