Allicdata Part #: | MSM5117400F-60J3FAR1-ND |
Manufacturer Part#: |
MSM5117400F-60J3FAR1 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC DRAM 16M PARALLEL |
More Detail: | DRAM Memory IC 16Mb (4M x 4) Parallel 30ns |
DataSheet: | MSM5117400F-60J3FAR1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | DRAM |
Memory Size: | 16Mb (4M x 4) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 30ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
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MSM5117400F-60J3FAR1 is a category of memory which is used for various types of applications. It is often used in embedded applications, cellular applications, and automotive applications. This type of memory is one of the most reliable types of memory because of its low power consumption, good temperature performance, and simple operation. The MSM5117400F-60J3FAR1 can be used in a variety of different applications as it provides reliable data storage and fast access times.
Application Field
The MSM5117400F-60J3FAR1 is commonly used in embedded applications due to its superior performance and cost-efficiency. This type of memory is an ideal choice for applications that require cost-effective and reliable non-volatile memory with fast access and low power consumption. In addition, its simple operation and low power consumption makes it suitable for continuous operation in long battery life and long-term data storage applications.
This type of memory is also used in cellular applications due to its low power consumption and fast access rates. Because of its low power consumption, the MSM5117400F-60J3FAR1 is typically used in mobile phones, laptops and other handheld devices. This type of memory helps to enhance the performance of a mobile phone by providing a fast, reliable and cost-effective data storage solution.
Finally, the MSM5117400F-60J3FAR1 is often used in automotive applications due to its reliability, cost-effectiveness, and low power consumption. This type of memory is ideal for these applications as it provides reliable data storage even during extreme temperatures and acceleration. The low power consumption of this memory means it also helps to improve fuel efficiency without sacrificing performance.
Working Principle
The MSM5117400F-60J3FAR1 memory is a non-volatile memory and works by storing data in the silicon cells. This type of memory is highly compatible with most electronic components and is easily integrated into a variety of different applications. The data stored in the cells is stored in a logic state, meaning no power is needed for the data to be stored. The device also uses an internal register, allowing it to retain details on the location of the stored data, improving read and write speeds.
When a read or write operation is performed, the MSM5117400F-60J3FAR1 memory first accesses the internal register to locate the stored data. Once the data is located, the device will either write or retrieve the data, depending on the type of operation performed. The device utilizes a number of solutions to ensure reliable performance and consistent operation, including Error Correction Code (ECC) and Dynamic Onboard Refresh (DOR).
In conclusion, the MSM5117400F-60J3FAR1 is a category of memory that is used for a variety of different applications. This type of memory is highly reliable due to its simple operation and low power consumption, making it suitable for embedded, cellular, and automotive applications. The device utilizes an internal register, ECC, and DOR to ensure reliable performance and consistent operation. Overall, the MSM5117400F-60J3FAR1 is a great choice for applications where reliable data storage and fast access times are needed.
The specific data is subject to PDF, and the above content is for reference
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