| Allicdata Part #: | MT29F128G08AMCABK3-10ITZ:A-ND |
| Manufacturer Part#: |
MT29F128G08AMCABK3-10ITZ:A |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 128G PARALLEL 100MHZ |
| More Detail: | FLASH - NAND Memory IC 128Gb (16G x 8) Parallel 10... |
| DataSheet: | MT29F128G08AMCABK3-10ITZ:A Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 128Gb (16G x 8) |
| Clock Frequency: | 100MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | -- |
| Supplier Device Package: | -- |
| Base Part Number: | MT29F128G08 |
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The MT29F128G08AMCABK3-10ITZ is a high performance Non-Volatile Memory (NVM) chip, which is used in a variety of applications, particularly in those that require a high level of performance, reliability, and data security.
The MT29F128G08AMCABK3-10ITZ is a multi-level cell (MLC) NAND type Flash memory chip with a capacity of 128Gbits that utilizes a sixteen-page architecture. The chip is capable of delivering up to 10MT/s (million transactions per second), plus it has an enhanced endurance of up to 128 erase cycles. The chip also incorporates advanced error correction code (ECC) and error detection systems, enhancing the data storage and storage stability.
The MT29F128G08AMCABK3-10ITZ is usually used in high-performance memory applications, such as embedded system, artificial intelligence (AI), machine learning, intelligent vehicle systems, industrial automation, and cloud computing. This chip can also be used for applications in which both performance and information security are requirements.
The working principle of the MT29F128G08AMCABK3-10ITZ memory chip is based on the floating-gate technology. This technology is based on the idea that electrons can flow between a pair of insulated gates, one on each side of a silicon wafer. When a voltage is applied, a portion of the electron flow will be trapped between the two gates, creating the “floating-gate” effect. The memory cell stores information in the form of the number of electrons that are trapped between the gates.
The chip operates using a read and write process. When writing data, an electrical charge passes through the chip, addressing the correct memory cell in the target memory block. The corresponding memory cell is then activated, allowing electrons to pass through and store the data. This process is reversed on reading, when the chips detect the number of electrons that are being held in the activated memory cell, and then extract the corresponding data.
TheMT29F128G08AMCABK3-10ITZ is widely used in portable devices, such as external hard drives, USB flash drives, and solid-state drives. It is also used in automotive applications, including safety systems, driver monitoring, and warning systems. In terms of industrial applications, the chip is used in industrial control systems, energy management systems, and autonomous robots.
The MT29F128G08AMCABK3-10ITZ memory chip has clearly revolutionized the process of storing and retrieving data. It is an extremely reliable form of memory chip with a high level of performance, reliability, and data security.
The specific data is subject to PDF, and the above content is for reference
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MT29F128G08AMCABK3-10ITZ:A Datasheet/PDF