MT29F128G08CFAABWP-12Z:A Allicdata Electronics
Allicdata Part #:

MT29F128G08CFAABWP-12Z:A-ND

Manufacturer Part#:

MT29F128G08CFAABWP-12Z:A

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128G PARALLEL 48TSOP I
More Detail: FLASH - NAND Memory IC 128Gb (16G x 8) Parallel 83...
DataSheet: MT29F128G08CFAABWP-12Z:A datasheetMT29F128G08CFAABWP-12Z:A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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Memory is the fundamental aspect of modern computing and the need for such components has been steadily increasing. The MT29F128G08CFAABWP-12Z is one of the memory components that were released recently and it offers a range of features and benefits. This article will discuss the applications and working principles of the MT29F128G08CFAABWP-12Z.

The MT29F128G08CFAABWP-12Z is a 128 gigabyte NAND flash memory chip. This chip is often used in mobile devices and digital cameras because of its ability to store very large amounts of data in a very small space. It has a wafer stacking approach with 8 layers, which makes the whole unit more reliable. The chip has an error correction circuit (ECC), which is designed to correct any errors that are found during the writing and erasing of data. It also has an internal Data Byte Lane (DBL) and an In-System Programming (ISP) feature which enables data to be read, written and erased without having to remove the chip from the device.

The MT29F128G08CFAABWP-12Z is a reliable memory component with a very high read/write speed and a good response time. It has a high-speed interface and is also equipped with built-in power control. This component has a lower voltage power consumption than the conventional NAND flash, making it an ideal choice for mobile and consumer electronics devices. It also has a low shock and vibration resistance and this makes it much more durable than conventional memory.

The MT29F128G08CFAABWP-12Z is also a multi-plane memory component and it is optimized for high-speed, high-capacity operations. This component can provide higher performance when used in applications such as video streaming, HD video recorder and gaming. The MT29F128G08CFAABWP-12Z also has a 4K write/erase pulse and a 4K QoS read cycle. This component offers a very low power consumption, making it an ideal choice for mobile and consumer electronics devices.

The working principle of the MT29F128G08CFAABWP-12Z is that it has two or more memory cells, each with its own distinct characteristics. The cells can be used to store data or to retrieve data. The process begins with the cells being selected and the data then being written or erased. Then, the cells are read back out of the memory and the data is compared against the expected result. If the data does not match the expected result, then an error is flagged. The data is then corrected or rewritten.

The MT29F128G08CFAABWP-12Z is widely used in digital cameras and smartphones because of its high capacity and its low power consumption. This component also has a well-defined data structure, which makes it suitable for applications such as video streaming, HD video recorder and gaming. This component is also ideal for use in embedded systems and industrial applications due to its low power consumption and high read/write speeds.

In conclusion, the MT29F128G08CFAABWP-12Z is an effective memory component with a large storage capacity, a high read/write speed and a low power consumption. This component is suitable for a range of applications such as mobile devices, digital cameras, and embedded systems. This component is also able to provide more efficient operation due to the use of its 8-layer wafer stacking approach and the inclusion of an error correction circuit.

The specific data is subject to PDF, and the above content is for reference

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