MT29F1G01ABAFDSF-AAT:F

Series:	--
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	1Gb (1G x 1)
Write Cycle Time - Word, Page:	--
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TA)

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Overview

The MT29F1G01ABAFDSF-AAT:F is a 1Gbit NAND Flash memory. It is primarily designed for use in embedded systems and as a mass-storage functions in enterprise/consumer applications. It is made with a single transistor per cell NAND Flash technology. It offers superior performance when compared to other memory technologies for both read and write operations.

Applications

The MT29F1G01ABAFDSF-AAT:F is suitable for a variety of applications, including:

• Data Storage Devices: Devices such as USB Flash Drives, digital cameras, audio/video players, SD/microSD cards, and MP3 players.
• Embedded System Applications: This device can be used as a mass storage device for a variety of embedded systems, such as digital televisions, automotive systems, networking hardware, and gaming consoles.
• Enterprise Storage Solutions: This NAND Flash technology is well suited for data storage solutions in business enterprises, where highly-reliable data storage and high-speed data transfer over long distances is required.
• Consumer Electronics: The MT29F1G01ABAFDSF-AAT:F is ideal for consumer electronics applications, such as mobile phones, camcorders, and other portable media devices.

Features

The MT29F1G01ABAFDSF-AAT:F offers a wide range of features, including:

• High performance: The device is capable of providing high performance read/write operations compared to other types of memory due to its single transistor per cell NAND Flash technology.
• Low power consumption: The MT29F1G01ABAFDSF-AAT:F offers superior power efficiency, allowing for extended product life.
• High reliability: The device is designed to be highly reliable, making it suitable for long-term storage of data.
• Cost effectiveness: The device is offered at a cost-effective rate compared to other types of memory.
• Wide compatibility: The device is compatible with a wide range of host interfaces and NAND Flash controller technologies.

Working Principle

At the core of the MT29F1G01ABAFDSF-AAT:F is a single transistor per cell NAND Flash technology. This technology utilizes the industry\'s smallest floating gate memory cell (one-transistor cell) to store data. This floating gate memory cell is constructed with a single transistor and two-bit per cell NAND Flash interface. It consists of a two-dimension array of sixteen floating gates. When data is written to the device, a voltage is applied to the floating gate to move electrons from the cell\'s channel region to the floating gate, thus storing the data electrostatically. When data is read from the device, a sense amplifier is used to detect the presence or absence of electrons on the floating gate. This allows for fast, reliable data read/write operations.

Conclusion

The MT29F1G01ABAFDSF-AAT:F is a 1Gbit NAND Flash memory device designed for embedded systems and mass storage solutions. It features single transistor per cell NAND Flash technology, providing high performance read/write operations. It also offers low power consumption and high reliability, making it an ideal choice for applications requiring data storage and retrieval.

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