MT29F4G08ABAFAH4-AATES:F TR

Series:	Automotive, AEC-Q100
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	4Gb (512M x 8)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TC)

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MT29F4G08ABAFAH4-AATES:F TR Memory

The MT29F4G08ABAFAH4-AATES:F TR is a type of dynamic random access memory (DRAM). It is a technology employed in digital computers that provides the capacity to store data using random access of electronic circuits. DRAM has been in use since the 1970s and is still widely used today due to its low cost.The memory includes a 4 Gb (gigabit) monolithic array of double data rate (DDR) synchronous dynamic random access memory (SDRAM) using an advanced 90nm technology. The product is referred to as an 8-gigabit, DDR3 SDRAM, with a capacity of 512Mx8. It has eight memory bus I/O bits, or four memory chip select pins. The memory is made up of 32 planes, and each plane has 64 pages.The MT29F4G08ABAFAH4-AATES:F TR is designed to support the high-performance demands of embedded applications, up to a maximum operating frequency of 1066 MHz. The memory supports register-based and auto-precharge read and write operations. It is designed for reliable, high-speed operation and is suitable for use in embedded applications such as digital cameras, cell phones, and digital video recorders.The main function of the MT29F4G08ABAFAH4-AATES:F TR is to provide the user with memory storage that is fast, efficient and reliable. The memory uses an array of bit cells, which can store a bit of information, as well as a system of multiplexing and demultiplexing that allows for simultaneous access of data from a single or multiple devices. When data is read from or written to the memory, the appropriate voltage levels are used.The MT29F4G08ABAFAH4-AATES:F TR provides a high degree of protection against power failure and is designed to operate in industrial and consumer applications. It can be used in low-voltage and high-temperature environments and is compliant with the JEDEC DDR3 standard. The product supports a range of error-checking technologies, including error-correction code (ECC) and cyclic redundancy-check (CRC) functions.In addition to its speed and durability, the MT29F4G08ABAFAH4-AATES:F TR is designed with low power consumption. This makes it ideal for a wide range of embedded applications, where battery life must be optimized. The power savings are achieved through its low self-discharge rate and ultra low power modes for added power savings. The manufacturer claims that its power consumption is up to 50 percent less than that of conventional DRAMs.Despite its advantages, there are some drawbacks to the MT29F4G08ABAFAH4-AATES:F TR. Since the memory is highly dynamic, it may require frequent refreshing to maintain data integrity. Additionally, since the memory is packed in an array, it is more susceptible to data corruption and bit failure caused by errors in data input or program coding.In summary, the MT29F4G08ABAFAH4-AATES:F TR is a dynamic random access memory (DRAM) that offers high-speed and reliable operation. It has several advantageous features, including low-power consumption, low self-discharge rate, and compliance with the JEDEC DDR3 standard. Despite its benefits, the memory also has several drawbacks, such as susceptibility to data corruption and bit failure. Nevertheless, the MT29F4G08ABAFAH4-AATES:F TR is a great choice for anyone seeking a reliable, high-performance DRAM to use in their embedded applications.

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