| Allicdata Part #: | MT40A512M16JY-062EIT:B-ND |
| Manufacturer Part#: |
MT40A512M16JY-062E IT:B |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 8G PARALLEL 1.6GHZ |
| More Detail: | SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.... |
| DataSheet: | MT40A512M16JY-062E IT:B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - DDR4 |
| Memory Size: | 8Gb (512M x 16) |
| Clock Frequency: | 1.6GHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.14 V ~ 1.26 V |
| Operating Temperature: | -40°C ~ 95°C (TC) |
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MT40A512M16JY-062E IT:B: Application Field and Working Principle
MT40A512M16JY-062E IT:B is a type of dynamic random access memory (DRAM) from Micron, a leading manufacturer of memory solutions. It is a high-density, high-performance DRAM designed for use in enterprise-class systems that require the most reliable and highest performance storage. The DRAM is 9.375 inches long with a 16-bit bus width and supports a frequency of 666MHz. The MT40A512M16JY-062E IT:B is the most advanced DRAM in its class and offers a wide range of features and benefits.
Applications
The MT40A512M16JY-062E IT:B is designed to meet the needs of a variety of computing applications. It is an ideal choice for application server and high performance computing (HPC) applications that require high reliability and sustained performance. The DRAM is also well suited for mission-critical applications in the enterprise such as databases and data centers, as well as in the aerospace and military industries. Additionally, the DRAM is an excellent choice for embedded applications, such as automotive infotainment, medical imaging, and gaming consoles.
Working Principle
The MT40A512M16JY-062E IT:B is a dynamic random access memory (DRAM). This type of memory works by storing information in a series of tiny capacitors that can hold a charge or not, providing a 0 or 1 value. When the memory is referenced with a write operation, the capacitors are cleared and rewritten with the data. When the memory is referenced during a read operation, the capacitors return their stored values. The MT40A512M16JY-062E IT:B operates at a frequency of 666MHz, which is the fastest of any DRAM in its class.
The MT40A512M16JY-062E IT:B is designed to provide the highest performance and reliability available in a DRAM. To achieve this, the DRAM utilizes a patented feature called Error Correcting Code (ECC) which is used to detect and correct errors in data that is stored in memory. The DRAM also features higher write speeds and is designed to support read and write operations simultaneously.
Conclusion
The MT40A512M16JY-062E IT:B is a dynamic random access memory (DRAM) designed for enterprise applications which require the most reliable and highest performance storage. It is a high-density, high-performance DRAM which operates at a frequency of 666MHz, making it the fastest of its kind. The DRAM utilizes a patented feature called Error Correcting Code (ECC) to detect and correct errors in stored data, and features higher write speeds and simultaneous read and write operations. It is an ideal choice for all types of high-performance computing applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT40A512M16JY-062E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.6GH... |
| MT40A512M16JY-075E:B TR | Micron Techn... | -- | 1000 | IC DRAM 8G PARALLEL 96FBG... |
| MT40A512M16JY-075E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.33G... |
| MT40A512M16JY-083E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
| MT40A512M8RH-083E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
| MT40A512M16JY-062E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.6GH... |
| MT40A512M8HX-083E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
| MT40A2G4SA-062E:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.6GH... |
| MT40A256M16GE-075E AUT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
| MT40A256M16GE-062E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
| MT40A256M16GE-075E AAT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.33G... |
| MT40A2G8NRE-083E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 78FB... |
| MT40A1G4RH-075E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.33G... |
| MT40A2G8FSE-093E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 78FB... |
| MT40A512M16LY-062E IT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.6GH... |
| MT40A256M16GE-083E AAT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
| MT40A256M16GE-083E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
| MT40A2G4TRF-093E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
| MT40A512M16LY-075:E | Micron Techn... | -- | 1000 | IC DRAM 8G PARALLEL 1.33G... |
| MT40A512M16JY-075E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.33G... |
| MT40A256M16GE-083E AUT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
| MT40A512M8RH-075E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
| MT40A4G4NRE-083E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 1.2G... |
| MT40A256M16GE-083E AIT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
| MT40A2G8FSE-083E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 1.2G... |
| MT40A512M8RH-083E AAT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
| MT40A1G16WBU-075E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 1.33... |
| MT40A2G4TRF-107E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
| MT40A512M16HA-083E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
| MT40A2G4WE-075E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.33G... |
| MT40A512M16JY-083E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
| MT40A1G8WE-075E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.33G... |
| MT40A1G8WE-083E AIT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.2GH... |
| MT40A256M16GE-062E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
| MT40A512M8RH-075E AAT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.33G... |
| MT40A1G8SA-062E IT:E | Micron Techn... | 0.0 $ | 1423 | IC DRAM 8G PARALLEL 1.6GH... |
| MT40A512M16JY-083E AUT:B | Micron Techn... | 95.22 $ | 500 | IC DRAM 8G PARALLEL 1.2GH... |
| MT40A512M16HA-083E IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
| MT40A4G4FSE-083E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 1.2G... |
| MT40A4G8KVA-083H:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G PARALLEL 1.2G... |
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MT40A512M16JY-062E IT:B Datasheet/PDF