| Allicdata Part #: | MT40A512M16LY-062EIT:ETR-ND |
| Manufacturer Part#: |
MT40A512M16LY-062E IT:E TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 8G PARALLEL 1.6GHZ |
| More Detail: | SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.... |
| DataSheet: | MT40A512M16LY-062E IT:E TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - DDR4 |
| Memory Size: | 8Gb (512M x 16) |
| Clock Frequency: | 1.6GHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.14 V ~ 1.26 V |
| Operating Temperature: | -40°C ~ 95°C (TC) |
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MT40A512M16LY-062E IT:E TR is a type of memory used by computers and other digital devices. It is a type of random access memory (RAM) which is used to store data temporarily for quick access. As the name suggests, it is made up of 512M DRAM chip package in an e-TR form factor. It provides a high level of performance and is mainly used in mobile devices, computer systems, networking equipment and server applications. The e-TR stands for ‘Extended Timing Range’ and it is the latest type of RAM technology.
In terms of its application field, MT40A512M16LY-062E IT:E TR is often used in mobile devices as it has a very small form factor to enable it to fit in smaller device sizes. The 512M DRAM chip is also able to provide superior performance and reliability when compared to other types of memory such as SRAM or DRAM. It can also provide higher data storage for storage needs that require a large amount of capacity. In terms of computer systems, the extended timing range of the e-TR form factor allows for quicker response times in order to improve system performance. This is because it is better able to keep up with demanding workloads due to its improved speeds.
In terms of its working principle, MT40A512M16LY-062E IT:E TR is based on the principles of dynamic random access memory (DRAM). This type of memory works by storing data as electric charges on individual memory cells. Data is written and read to the cells using columns and rows. When data is written, a pulse of electric current is sent to the cells in rows and columns to charge the cells and form the data pattern. When data is read, a request is sent to the columns and the cells which contain the data are accessed and the data is read.
The technology used in MT40A512M16LY-062E IT:E TR is also more advanced than that used in conventional DRAM. This is because the additional timing range allows the chip to retain data for a longer period of time and it is better able to manage multiple requests at once. This makes the chip better suited for applications which require data to be accessed quickly and efficiently.
Overall, MT40A512M16LY-062E IT:E TR is a type of memory specifically designed to provide a high level of performance and reliability for mobile devices, computer systems, networking equipment and server applications. Its small form factor and extended timing range allows for improved response times and greater data storage capacity. Additionally, its working principle is based on DRAM technology and it is better able to manage multiple requests at once. This makes it well suited for applications which require quick and efficient access to data.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT40A512M16JY-062E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.6GH... |
| MT40A512M16JY-075E:B TR | Micron Techn... | -- | 1000 | IC DRAM 8G PARALLEL 96FBG... |
| MT40A512M16JY-075E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.33G... |
| MT40A512M16JY-083E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
| MT40A512M8RH-083E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
| MT40A512M16JY-062E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.6GH... |
| MT40A512M8HX-083E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
| MT40A2G4SA-062E:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.6GH... |
| MT40A256M16GE-075E AUT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
| MT40A256M16GE-062E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
| MT40A256M16GE-075E AAT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.33G... |
| MT40A2G8NRE-083E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 78FB... |
| MT40A1G4RH-075E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.33G... |
| MT40A2G8FSE-093E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 78FB... |
| MT40A512M16LY-062E IT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.6GH... |
| MT40A256M16GE-083E AAT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
| MT40A256M16GE-083E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
| MT40A2G4TRF-093E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
| MT40A512M16LY-075:E | Micron Techn... | -- | 1000 | IC DRAM 8G PARALLEL 1.33G... |
| MT40A512M16JY-075E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.33G... |
| MT40A256M16GE-083E AUT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
| MT40A512M8RH-075E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
| MT40A4G4NRE-083E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 1.2G... |
| MT40A256M16GE-083E AIT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
| MT40A2G8FSE-083E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 1.2G... |
| MT40A512M8RH-083E AAT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
| MT40A1G16WBU-075E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 1.33... |
| MT40A2G4TRF-107E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
| MT40A512M16HA-083E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
| MT40A2G4WE-075E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.33G... |
| MT40A512M16JY-083E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
| MT40A1G8WE-075E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.33G... |
| MT40A1G8WE-083E AIT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.2GH... |
| MT40A256M16GE-062E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
| MT40A512M8RH-075E AAT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.33G... |
| MT40A1G8SA-062E IT:E | Micron Techn... | 0.0 $ | 1423 | IC DRAM 8G PARALLEL 1.6GH... |
| MT40A512M16JY-083E AUT:B | Micron Techn... | 95.22 $ | 500 | IC DRAM 8G PARALLEL 1.2GH... |
| MT40A512M16HA-083E IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
| MT40A4G4FSE-083E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 1.2G... |
| MT40A4G8KVA-083H:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G PARALLEL 1.2G... |
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MT40A512M16LY-062E IT:E TR Datasheet/PDF