MT40A512M8RH-075E AAT:B TR Allicdata Electronics
Allicdata Part #:

557-1737-2-ND

Manufacturer Part#:

MT40A512M8RH-075E AAT:B TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 4G PARALLEL 78FBGA
More Detail: SDRAM - DDR4 Memory IC 4Gb (512M x 8) Parallel 1.3...
DataSheet: MT40A512M8RH-075E AAT:B TR datasheetMT40A512M8RH-075E AAT:B TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Clock Frequency: 1.33GHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x10.5)
Description

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Introduction of MT40A512M8RH-075E AAT:B TR

MT40A512M8RH-075E AAT:B TR is a type of memory and it is widely used in various electronic devices, such as computers and mobile devices. Developed by Micron Technologies Inc., this type of memory has been designed to meet the demands of high speed, high power and low temperature operations. It features 512Mbit 8 Gigabit DDR3 memory, encoded with 74-ball FBGAs and provides an operating frequency of up to 800MHz.

Specifications of MT40A512M8RH-075E AAT:B TR

The MT40A512M8RH-075E AAT:B TR is a DDR3 memory with a package type FBGA-74. The memory size of the device is 8GB and its nominal voltage is 1.35V. The device offers a single 8-bit read burst of 18.6MB/s and a random read latency of 42ns. It has a current operating temperature range from -25°C to 85°C and an absolute DTI temperature range from -40°C to 85°C.

Application fields of MT40A512M8RH-075E AAT:B TR

The MT40A512M8RH-075E AAT:B TR is a high performance memory with a wide range of applications. Its efficient design makes it suitable for use in various gadgets such as laptops, smartphones, tablets and embedded applications. It is also utilized in desktop computers, gaming consoles, home appliances and industrial equipment. Moreover, it can be utilized in automotive systems, such as vehicles’ navigation, communication and entertainment systems.

Working principle of MT40A512M8RH-075E AAT:B TR

The MT40A512M8RH-075E AAT:B TR is an 8 GB DDR3 RAM module. It consists of two 16 Mb memory chips and two 8 Mb memory chips that are connected using DDR3 data paths. The main feature of this memory is its low power operation, thanks to its advanced power management system. It operates with a nominal voltage of 1.25V and consumes 6W at its maximum efficiency. In addition, the module burns no more than 0.23W/GB/clock, which makes it even more energy efficient.

In order to operate, the MT40A512M8RH-075E AAT:B TR requires a DDR3 data bus which comprises 204 pins and interfaces with the processor or controller. The maximum data transfer rate is limited to 1600 Mbps (800 MHz) and the device can support up to 8 banks of 1024 x 8 bits. The module also supports both read and write operations, as well as ECC (Error Correction Code) to correct and detect any errors that may arise in volatile memory operations. The memory module also features auto-refresh and self-refresh operations which allow it to preserve its content while it is not actively used.

Conclusion

The MT40A512M8RH-075E AAT:B TR is a type of memory designed to meet the demands of high power, high speeds and low temperature operations. It is a very efficient memory, with a low power consumption and can be utilized a wide range of applications, ranging from desktop computers, gaming consoles and industrial equipment. The memory module is connected to a DDR3 data bus and supports both read and write operations. The device also supports ECC for error correction and auto-refresh and self-refresh operations for data preservation.

The specific data is subject to PDF, and the above content is for reference

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