MT46H128M32L2KQ-48 WT:C TR

Write Cycle Time - Word, Page:	14.4ns
Base Part Number:	MT46H128M32
Supplier Device Package:	168-WFBGA (12x12)
Package / Case:	168-WFBGA
Mounting Type:	Surface Mount
Operating Temperature:	-25°C ~ 85°C (TA)
Voltage - Supply:	1.7 V ~ 1.95 V
Memory Interface:	Parallel
Access Time:	5.0ns
Series:	--
Clock Frequency:	208MHz
Memory Size:	4Gb (128M x 32)
Technology:	SDRAM - Mobile LPDDR
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Memory: MT46H128M32L2KQ-48 WT:C TR

Memory technology has come a long way since the first computer memory was invented in 1964. Over the years, a wide range of memory technologies have been developed. One such technology is the MT46H128M32L2KQ-48 WT:C TR (this is often referred to as just “MT46”). This is a type of dynamic random access memory (DRAM) that is commonly used in embedded systems, such as industrial controllers, consumer devices, and computer systems. The MT46H128M32L2KQ-48 WT:C TR is a 128 megabit (Mb) DRAM chip that is organized in 8 banks and 16 external data lines and operates with an output data rate of 133MHz (151.66MHz tCK). It is a non-volatile (NV) memory which is capable of storing data even when it is not powered on. This memory is also part of the high-bandwidth memory (HBM) family of products, which is a type of memory that has high-speed data transfer rates, large memory capacity, and low power consumption. The MT46H128M32L2KQ-48 WT:C TR is used in a wide range of applications, including industrial automation and process control, consumer electronics, automotive, server and networking, and multimedia markets. This memory is well suited for these types of applications due to its high data transfer rate, large memory capacity, and low power consumption. The working principle of the MT46H128M32L2KQ-48 WT:C TR is similar to that of other DRAMs, such as the now obsolete Static Random Access Memory (SRAM). However, the way that the MT46 is organized and operates is slightly different. It works by using the clock signal (tCK) to synchronize the writing and refreshing of data. Data is written to the memory by applying a voltage to the data lines, which in turn will activate the memory cell. Conversely, data is read from the memory by sensing the voltage on the data lines. In addition, the memory is also periodically refreshed, which ensures that the data is not lost. In addition to its high data transfer rate and large memory capacity, the MT46H128M32L2KQ-48 WT:C TR also has the following features which make it an attractive choice for certain applications: It has an integrated Error Protection System that monitors data integrity and checks for errors. It also has on-die Termination (ODT) which helps reduce signal reflections on the data lines and also helps conserve power. Lastly, it has a Self Refresh Rate (SRR) feature which allows the memory to enter a low-power sleep state when idle.Overall, the MT46H128M32L2KQ-48 WT:C TR is a reliable, high performance memory solution that is suitable for a wide range of applications. Its high data transfer rate, large memory capacity, low power consumption, and error protection system make it an attractive choice for any situation where speed and reliability are paramount.

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