| Allicdata Part #: | MT46H128M32L2MC-6WT:BTR-ND |
| Manufacturer Part#: |
MT46H128M32L2MC-6 WT:B TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 4G PARALLEL 240WFBGA |
| More Detail: | SDRAM - Mobile LPDDR Memory IC 4Gb (128M x 32) Par... |
| DataSheet: | MT46H128M32L2MC-6 WT:B TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT46H128M32 |
| Supplier Device Package: | 240-WFBGA (14x14) |
| Package / Case: | 240-WFBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -25°C ~ 85°C (TA) |
| Voltage - Supply: | 1.7 V ~ 1.95 V |
| Memory Interface: | Parallel |
| Access Time: | 5.0ns |
| Series: | -- |
| Clock Frequency: | 166MHz |
| Memory Size: | 4Gb (128M x 32) |
| Technology: | SDRAM - Mobile LPDDR |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.Memory devices are used in almost all computing systems as an essential piece of hardware for storing data. Memory devices can come in various sizes and configuration depending on the application needs and requirements. The MT46H128M32L2MC-6WT:B TR is one such memory device that has been specifically designed for high speed applications and is available in both DDR and LPDDR configurations. This memory device has a total capacity of 2 gigabits and utilizes the LPDDR2 interface for data and address IO.
This memory device is built on an advanced design that includes a high-speed, low-power and high-density architecture. This memory device is able to attain a maximum clock frequency of 400MHz and is able to reach a data rate of 3200Mb/s in both read and write modes. It has an efficient power management system and operates at 1.35 volts with power saving features such as SDR, SDRAM and DDR active power management.
In terms of its application field, this device is suitable for use in various applications that require fast data processing and high performance. Some of these application fields include servers, digital-signal processing (DSPs), embedded systems, automotive multimedia and consumer electronics. This device can also be used in mobile phones, tablets and medical imaging systems. Due to its high speed and low power consumption, it is also suitable for use in portable applications.
In terms of its working principle, this memory device operates on a row and column based system. The memory controller will issue a read or write command followed by addressing and data information. The memory controller will then latch the column address and activate the row address which will activate the underlying memory array. Data will then be read from the activated memory cells and the data fetched from the memory cells will be put in the column address register and then sent to the data output register.
The MT46H128M32L2MC-6WT:B TR memory device is an excellent choice for applications that require high speed and low power consumption. With its advanced design and efficient power management system, it is suitable for various applications including servers, embedded systems and consumer electronics. Its row and column-based architecture allows it to provide fast data processing speed, making it a suitable choice for the above mentioned applications.
The specific data is subject to PDF, and the above content is for reference
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| MT46H64M32LFKQ-5 IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 168FB... |
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| MT46H64M16LFCK-5 L IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60VFB... |
| MT46V64M4FG-75:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
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| MT46V64M8BN-6 L:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
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MT46H128M32L2MC-6 WT:B TR Datasheet/PDF