MT46H16M32LFCM-6:B TR Allicdata Electronics

MT46H16M32LFCM-6:B TR Integrated Circuits (ICs)

Allicdata Part #:

557-1381-2-ND

Manufacturer Part#:

MT46H16M32LFCM-6:B TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 512M PARALLEL 90VFBGA
More Detail: SDRAM - Mobile LPDDR Memory IC 512Mb (16M x 32) Pa...
DataSheet: MT46H16M32LFCM-6:B TR datasheetMT46H16M32LFCM-6:B TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT46H16M32
Supplier Device Package: 90-VFBGA (10x13)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7 V ~ 1.95 V
Memory Interface: Parallel
Access Time: 5.0ns
Series: --
Clock Frequency: 166MHz
Memory Size: 512Mb (16M x 32)
Technology: SDRAM - Mobile LPDDR
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Memory is an important component in the field of computers. MT46H16M32LFCM-6:B TR is a type of synchronous dynamic random access memory (SDRAM) that has been widely used in various embedded system applications. It features high speed, low power consumption, low voltage requirements and high data transfer rates. This article will discuss the application fields and working principle of MT46H16M32LFCM-6:B TR.

MT46H16M32LFCM-6:B TR memory is used in many embedded systems, including in automobiles, industrial control systems and digital cameras. This is due to the fact that the device is able to perform high-speed data transfer. This is achieved through its ability to switch between a synchronous mode and a burst mode. In the synchronous mode, a single data transfer is performed to allow high speed data delivery. On the other hand, the burst mode allows several data transfers to be done in one operation. Its low voltage requirements enable the device to be used in various types of applications with low-power requirements.

MT46H16M32LFCM-6:B TR\'s working principle is based on the principles used in SDRAM. The main concept behind this device is that it stores information in memory cells, referred to as cells. Cells can contain up to 8 bits of data. To access the stored data, an address bus is used to select the memory cell. A control bus is used to control the operation of the memory, such as enabling data transfer. A data bus is used for data input and output.

The operation of MT46H16M32LFCM-6:B TR memory is fairly straightforward. When a request is made, the address bus specifies the memory cell that needs to be accessed. The control bus selects the desired operation, such as a read or write operation. Once the desired operation is selected, the data bus is used to either input or output the desired data. The device is capable of performing multiple operations in a single cycle.

Overall, MT46H16M32LFCM-6:B TR memory is an excellent choice for embedded system applications due to its high transfer speed, low power consumption and low voltage requirements. Its simple operation also makes it easy to use. For embedded system developers who need a reliable memory device that requires minimal configuration, MT46H16M32LFCM-6:B TR is an ideal choice.

The specific data is subject to PDF, and the above content is for reference

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