MT46H16M32LFCM-6:B TR Integrated Circuits (ICs) |
|
| Allicdata Part #: | 557-1381-2-ND |
| Manufacturer Part#: |
MT46H16M32LFCM-6:B TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 512M PARALLEL 90VFBGA |
| More Detail: | SDRAM - Mobile LPDDR Memory IC 512Mb (16M x 32) Pa... |
| DataSheet: | MT46H16M32LFCM-6:B TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT46H16M32 |
| Supplier Device Package: | 90-VFBGA (10x13) |
| Package / Case: | 90-VFBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Voltage - Supply: | 1.7 V ~ 1.95 V |
| Memory Interface: | Parallel |
| Access Time: | 5.0ns |
| Series: | -- |
| Clock Frequency: | 166MHz |
| Memory Size: | 512Mb (16M x 32) |
| Technology: | SDRAM - Mobile LPDDR |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is an important component in the field of computers. MT46H16M32LFCM-6:B TR is a type of synchronous dynamic random access memory (SDRAM) that has been widely used in various embedded system applications. It features high speed, low power consumption, low voltage requirements and high data transfer rates. This article will discuss the application fields and working principle of MT46H16M32LFCM-6:B TR.
MT46H16M32LFCM-6:B TR memory is used in many embedded systems, including in automobiles, industrial control systems and digital cameras. This is due to the fact that the device is able to perform high-speed data transfer. This is achieved through its ability to switch between a synchronous mode and a burst mode. In the synchronous mode, a single data transfer is performed to allow high speed data delivery. On the other hand, the burst mode allows several data transfers to be done in one operation. Its low voltage requirements enable the device to be used in various types of applications with low-power requirements.
MT46H16M32LFCM-6:B TR\'s working principle is based on the principles used in SDRAM. The main concept behind this device is that it stores information in memory cells, referred to as cells. Cells can contain up to 8 bits of data. To access the stored data, an address bus is used to select the memory cell. A control bus is used to control the operation of the memory, such as enabling data transfer. A data bus is used for data input and output.
The operation of MT46H16M32LFCM-6:B TR memory is fairly straightforward. When a request is made, the address bus specifies the memory cell that needs to be accessed. The control bus selects the desired operation, such as a read or write operation. Once the desired operation is selected, the data bus is used to either input or output the desired data. The device is capable of performing multiple operations in a single cycle.
Overall, MT46H16M32LFCM-6:B TR memory is an excellent choice for embedded system applications due to its high transfer speed, low power consumption and low voltage requirements. Its simple operation also makes it easy to use. For embedded system developers who need a reliable memory device that requires minimal configuration, MT46H16M32LFCM-6:B TR is an ideal choice.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT46V32M8TG-6T L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46V32M16BN-5B:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V16M16BG-6 IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46V32M8P-5B IT:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46H128M16LFDD-48 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60VFB... |
| MT46H64M32LFBQ-48 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 90VFB... |
| MT46V256M4P-6T:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46H32M16LFBF-6:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60V... |
| MT46H32M32LFJG-6 IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 168VF... |
| MT46H64M32LFMA-5 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 168WF... |
| MT46H128M32L2MC-5 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 240WF... |
| MT46H8M32LFB5-75 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46H16M32LFCM-5 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46H16M32LFCX-6:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46V16M16FG-6 L:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46H8M32LFB5-6:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46V128M8P-6T IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46V16M16P-6T IT:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8P-5B AIT:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H128M16LFDD-48 IT:C | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 60VFB... |
| MT46H64M32LFKQ-5 IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 168FB... |
| MT46V32M16FN-75 L:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46H64M16LFCK-5 L IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60VFB... |
| MT46V64M4FG-75:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46H16M32LFB5-5 IT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46V64M8BN-6 L:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V256M4P-6T:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46V16M16BG-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46V32M16TG-75 IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H8M32LFB5-5 IT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46H8M32LFB5-5:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46V64M8P-5B:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V64M8P-6T IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V64M8FN-75 IT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V16M16P-5B IT:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8TG-5B IT:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V16M16TG-5B IT:M | Alliance Mem... | 2.0 $ | 1333 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8FN-75 L:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46H16M32LFCG-6 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 152... |
| MT46V16M16CY-5B AAT:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
MT46H16M32LFCM-6:B TR Datasheet/PDF