MT49H16M18CSJ-25:B

Memory: MT49H16M18CSJ-25:B Application Field and Working Principle

Introduction

As technology continues to advance, semiconductor memory components are becoming increasingly popular in many applications. MT49H16M18CSJ-25:B is a high-speed CMOS double-data-rate Synchronous DRAM (SDRAM). It is one of the most commonly used memory components due to its wide variety of applications, high performance, and low cost.

Overview

MT49H16M18CSJ-25:B is a 128Mbit DRAM based on a 9-bit pre-fetch, double-data-rate (DDR) architecture. It has a 72-bit data bus, two bits on each side of the data bus. The data rate is 1833 MHz, and the memory package size is 42mm x16mm. MT49H16M18CSJ-25:B also supports Enhanced Memory Refresh (EMR) for improved performance and lower power consumption.

Applications

MT49H16M18CSJ-25:B is used in a wide range of applications and devices. It is one of the most popular memory components for high-performance embedded applications such as networking, storage, storage applications, real-time operating systems, and embedded systems. It is also used in consumer applications such as digital cameras, MP3 players, and set-top boxes.

MT49H16M18CSJ-25:B is also used in mobile applications such as laptops, PDAs, and smartphones. It is commonly used in game consoles, home theater systems, and automotive electronics. This memory component is also used in a wide range of industrial applications, including medical instrumentation, factory automation, and military communications systems.

Working Principle

The working principle of the MT49H16M18CSJ-25:B memory component is based on the Double-Data-Rate (DDR) architecture. DDR is a type of synchronous DRAM (SDRAM) that can transfer data at twice the clock rate of standard SDRAM. This memory component supports 1833 MHz and up to 72 bits of data on each side of the data bus.

In order to provide faster access to data, the MT49H16M18CSJ-25:B memory component contains a 9-bit pre-fetch. This allows the memory controller to fetch four 9-bit words of data in one cycle. The memory controller can then store these four words of data in on-chip registers and perform two data transfers per clock cycle.

The MT49H16M18CSJ-25:B also supports Enhanced Memory Refresh (EMR) for improved performance and lower power consumption. EMR is a new technology that allows for faster refreshing of dynamic RAM cells with fewer refresh cycles. This reduces power consumption and improves performance.

Conclusion

MT49H16M18CSJ-25:B is a popular memory component used in a wide variety of applications. Its ability to provide high performance and low power consumption makes it an ideal solution for embedded applications, mobile devices, and more. Its unique 9-bit pre-fetch feature and support for E enhanced Memory Refresh makes it suitable for high-performance applications.