MT52L256M32D1PU-107 WT:B TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an essential element of all computer systems, and the MT52L256M32D1PU-107 WT:B TR is a high-performance, low power 64-Mbit (8Mx32) mobile computer random access memory (RAM). The memory has a lot of advanced features and can be used in a range of applications, including embedded applications, PC systems, and mobile devices. In this article, we\'ll explore the application field and working principles of the MT52L256M32D1PU-107 WT:B TR.

Application Field and Use Cases

The MT52L256M32D1PU-107 WT:B TR is a DRAM memory that\'s designed for use in mobile embedded applications. It\'s an ideal choice for applications that require low power consumption and a high performance-to-power ratio, such as mobile gaming and multimedia applications. It\'s also well-suited for mobile phones, tablets, and other handheld devices that need low power operation. The memory can also be used in non-mobile application such as desktop computers and servers thanks to its low power operation and wide operating temperature range.

The MT52L256M32D1PU-107 WT:B TR is available in a variety of form factors, including small packaging (TSOP-2), thin small outline package (TSOP-3) and ball grid array (BGA). This allows the memory to be used in a wide range of systems, including very thin mobile phones and other ultra-small devices.

Architecture and Features

The MT52L256M32D1PU-107 WT:B TR has an advanced architecture, featuring an 8Mx32 (256 Megabit) memory array. The memory is configured as 4Mx16, so each 4Mx16 bank has a separate set of control lines. Each of the 4Mx16 banks can operate in asynchronous, burst EDO (Enhanced Data Output), or synchronous burst EDO modes. In addition, the memory supports burst read/write access, making it suitable for applications that require fast data access speeds.

The MT52L256M32D1PU-107 WT:B TR also has low power consumption and a wide temperature range, making it suitable for applications that require decreased power consumption or must operate in a wide range of temperatures. In addition, the memory has a wide range of features, such as error correction code (ECC) and detection RAM (DRAM) functionality. These features make it ideal for mission-critical systems and applications.

Working Principle

The working principle of the MT52L256M32D1PU-107 WT:B TR is based on a synchronous DRAM (SDRAM) architecture. In this architecture, the memory array is connected to a clock signal and a controller. The controller sends read and write commands to the memory array, and the clock signal controls the speed at which the memory is accessed. As each 4Mx16 bank is separate, the memory can access each bank in different speeds, allowing for increased performance.

The MT52L256M32D1PU-107 WT:B TR also supports burst access, which allows the memory to quickly read out a sequence of data from the same bank. This can improve the access speed drastically, which is particularly useful in applications that require frequent data accesses. Finally, the memory also has error correction code (ECC) and detection RAM (DRAM) functionality. This allows the memory to detect and correct errors in the data, making it ideal for mission-critical systems that require higher levels of reliability.

Conclusion

The MT52L256M32D1PU-107 WT:B TR is a high-performance, low-power 64-Mbit (8Mx32) mobile computer random access memory (RAM). The memory is suitable for a range of applications, including embedded applications, PC systems, and mobile devices, thanks to its features such as low power consumption, wide temperature range, and error correction code (ECC) and detection RAM (DRAM) functionality. In addition, the memory is based on a synchronous DRAM (SDRAM) architecture and supports burst access, offering improved access speeds. In summary, the MT52L256M32D1PU-107 WT:B TR is a great choice for high performance and low power operations.

The specific data is subject to PDF, and the above content is for reference