MTA4ATF51264AZ-2G6B1

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Memory modules, which include a wide variety of products, are an integral part of modern technology, essential for the functioning of computers, servers, and other devices. The MTA4ATF51264AZ-2G6B1 is a memory module designed to offer high-performance data storage and processing capabilities. This article will provide an overview of the application field and working principle of the MTA4ATF51264AZ-2G6B1.

The MTA4ATF51264AZ-2G6B1 is a DDR3-2400 memory module with support for the Intel Enhanced Memory architecture. It is a four-rank, single-side memory module made up of sixteen DRAM chips with an overall capacity of 8192MB. The chips are organized into two 64-bit channels, each of which is capable of running at speeds of up to 1.2 GT/s when overclocked. This memory module offers high-performance data processing, allowing devices to reduce power consumption and improve overall performance.

The application field of the MTA4ATF51264AZ-2G6B1 covers a wide range of technologies. It is suitable for use in desktop PCs and notebooks, as well as in servers and other high-end computing systems. The MTA4ATF51264AZ-2G6B1 is also ideal for gaming and multimedia applications, with its high-speed memory processing capabilities allowing for smoother and more immersive gaming experiences. Furthermore, its scalability means it can be used in high-end applications such as virtualization and cloud computing.

The MTA4ATF51264AZ-2G6B1 working principle is based on its use of DRAM technology. DRAM, or Dynamic Random Access Memory, is a type of computer memory that stores data in its cells, and can be written and read from multiple times. The memory module is composed of sixteen DRAM chips, each with a capacity of 512MB, connected in parallel. This enhances the memory’s throughput speed, allowing it to handle large amounts of data quickly.

The MTA4ATF51264AZ-2G6B1 also utilizes a low-power operating mode, allowing it to reduce its power consumption and improve battery life in mobile devices. The module is designed with a built-in undervoltage detection mechanism, which ensures that the memory is never exposed to voltage levels that could be dangerous or damaging. Furthermore, the module uses an advanced error-correcting code to ensure data integrity, helping to prevent data loss or corruption.

In conclusion, the MTA4ATF51264AZ-2G6B1 is a high-performance memory module with a wide range of applications. Its DDR3-2400 memory system and Intel Enhanced Memory architecture allow it to offer high-speed data processing without compromising on power efficiency, making it an ideal choice for a broad range of applications. Furthermore, its built-in error-correcting code ensures data integrity and protection.

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