MTM232230L

Vgs(th) (Max) @ Id:	1.3V @ 1mA
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SMini3-G1
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1200pF @ 10V
Vgs (Max):	±10V
Series:	--
Rds On (Max) @ Id, Vgs:	28 mOhm @ 1A, 4V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	4.5A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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<p>Modern electronics is based on semiconductor components, such as transistors and integrated circuits. A field effect transistor or FET is such semiconductor device that can be used to control the flow of electricity. The MTM232230L is a dual N-Channel MOSFET in Japan&#39;s TO-220F package. It is an enhancement-type device and is constructed using a <b>floating gate process</b>, which removes the need for a control gate. In this article, we will discuss the <b>application field</b> and <b>working principle</b> of the MTM232230L FET.</p><p><br /><b> Application Field </b></p><p>The MTM232230L is a dual N-Channel MOSFET with a relatively low on-state resistance of 3.2Ω. This allows it to be used in various high power applications where a large amount of current needs to be controlled with minimal losses. The device is primarily used in switch mode power supplies (SMPS) where it can be used as a power switch to control the flow of current. It can also be used to construct high-power switching circuits for motor and solenoid control, as well as for the control of high power LEDs.</p><p>Apart from power switching applications, the MTM232230L can also be used to build multi-input logic-controlled analog amplifiers, such as comparators and LED drivers. It is an ideal choice for these applications due its excellent noise immunity and high operating temperature range of up to -40°C to 150°C.</p><p><br /><b> Working Principle </b></p><p>The MTM232230L is a MOSFET that is constructed using a floating-gate process. This process does away with the need for a control input gate. Instead, a dual-gate structure is utilized in which both the source and the drain regions are placed on a single channel (N-type) silicon layer. The floating gate is then formed by depositing an N-type gate oxide on the channel.</p><p>In a floating gate MOSFET, performing gate oxides are used. These oxides have a much higher electrical withstand voltage than those used in conventional MOSFETs (typically 30V). Additionally, the use of a floating gate process results in a breakdown voltage (Vds) of up to 55V and a current rating of up to 12A.</p><p>The floating gate process also results in superior switching performance. The gate oxide is equipped with an oxide-insulated auxiliary electrode and the resulting electric field induces a high level of vertical electric field intensity. This improves the on-state resistance and maximizes the reduction of power losses.</p><p>The MTM232230L also features a very fast switching response time due to its high-speed silicon process. The device also features a protective diode on the drain terminal to protect against reverse voltage spikes.</p><p><br />In conclusion, the MTM232230L is a dual N-Channel MOSFET with a low on-state resistance of 3.2Ω. It is manufactured using a floating gate process that improves its switching performance, breakdown voltage and current rating. The device can be used in various high power applications, such as motor and solenoid control, LED drivers, and switch mode power supplies. The device&#39;s features, such as its fast switching response time and protective diode ensure its reliability.</p><p><br /></p>

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