MUN5312DW1T2G

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MUN5312DW1T2G is a single transistor array (STA) in a package with six pre-biased transistors. It is classified as a bipolar junction transistor (BJT) array based on its construction. The device is well-suited for low-voltage and low-current applications, capable of driving a wide range of output loads. The power rating of the device is 200 mW for each transistor, allowing for higher current draw than in standard BJT arrangements.

Construction

The MUN5312DW1T2G is a low-power transistor array package. Each transistor consists of four terminal connections, including the collector, base, and emitter. The device has a package size of 2.6 mm x 2.6 mm, and is constructed from stainless steel with plastic pre-biased leads. The internal structure of the device consists of an array of three NPN bipolar transistors, having a low forward voltage drop (Vce(sat)) of 0.2V and a hfe of 200. The device also features an integrated base resistor, intended to reduce the base current (Ib) required to operate the device.

Working Principle

The working principle of the MUN5312DW1T2G device involves the use of the three transistors connected in a connection called Darlington or Series Bipolar Transistor Array (SBTA). To enable the device to operate, a supply voltage must be applied to the Base of the device. Once the Base voltage has been applied, the Collector voltage of the Base will be pulled up by the required current (Ib). This current will be amplified by the three transistors in series, with the resulting Collector-to-Emmitter voltage (Vce) across the transistors being proportional to the current amplified. This result can be used for driving output loads, and to switch on/off external circuit components.

Application Fields

The MUN5312DW1T2G is suitable for use in a wide range of applications, due to its low current and power requirements. Typical uses include driving small loads such as light bulbs, LED lighting, and small motors. It can also be used as a switch in circuits, to control larger loads such as AC mains circuits and relays. In addition, the device can be used in precision circuits, as the low Vce(sat) result in less power consumption, reducing heat production and improving circuit efficiency.

Conclusion

The MUN5312DW1T2G is a low-power pre-biased transistor array, constructed from three NPN transistors. The device can be used in a wide range of low-voltage and low-current applications, such as lighting, motors, and precision circuits. The device offers low Vce(sat) and low Ib, resulting in improved circuit efficiency and reduced power consumption. The device is particularly well-suited for use in low-power and low-voltage environments, such as battery-powered or portable applications.

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