N25Q128A11EV740 Allicdata Electronics
Allicdata Part #:

N25Q128A11EV740-ND

Manufacturer Part#:

N25Q128A11EV740

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M SPI 108MHZ
More Detail: FLASH - NOR Memory IC 128Mb (32M x 4) SPI 108MHz
DataSheet: N25Q128A11EV740 datasheetN25Q128A11EV740 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (32M x 4)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory technology is an important part of computer systems, and the type of memory used greatly affects the system performance. N25Q128A11EV740 is a type of non-volatile memory device developed for embedded applications. It provides high performance and reliability for system designers.

N25Q128A11EV740 feature a 7.5mm x 8mm 68-ball VFBGA package, with a total of 128Mb capacity, up to 60MHz clock, 1.8V single power supply, and up to 8,000 read/erase cycles. It is based on a non-volatile multi-level cell (MLC) technology, which stores two bits of data per cell. This MLC technology allows the N25Q128A11EV740 to be faster and more power-efficient than other types of non-volatile memories.

N25Q128A11EV740 can be used in various applications. It is commonly used in hand-held devices such as mobile phones, PDAs, and MP3 players, as well as for embedded applications such as automotive, industrial, and medical devices. It can also be used for automotive graphics and display systems, as well as in medical devices, test & measurement equipment, cognitive radio, and point-of-sale systems.

The working principle of N25Q128A11EV740 is based on the flash memory concept. It uses memory cells that are connected by semiconductor channels that are selectively enabled by an electric current. The cells can store data in the form of electrons with one or more levels per cell. When a current is applied, the electrons move through the channels, which can be read by electronics on the other end. The number of levels that can be stored in each cell determines the amount of data that can be stored in the N25Q128A11EV740.

N25Q128A11EV740 also features low voltage and power requirements. This makes it ideal for applications in portable and embedded systems. As well, it has an endurance of up to 8,000 program/erase cycles, making it suitable for long-term data storage applications.

In addition, N25Q128A11EV740 also has a wide operating temperature range. This is important when the device needs to be operated in extreme temperatures. It also has a high write speed, which is necessary for applications that require high-speed data transfer.

N25Q128A11EV740 is a versatile memory device that can be used in a variety of applications. Its combination of high performance, reliability, low-power consumption, and endurance make it ideal for embedded systems. It can also be used in automotive, industrial, and medical applications. As a result, N25Q128A11EV740 is an excellent choice for those looking for a memory solution for their system.

The specific data is subject to PDF, and the above content is for reference

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