Allicdata Part #: | NDF04N60ZGOS-ND |
Manufacturer Part#: |
NDF04N60ZG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 4.8A TO-220FP |
More Detail: | N-Channel 600V 4.8A (Tc) 30W (Tc) Through Hole TO-... |
DataSheet: | NDF04N60ZG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 640pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.8A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NDF04N60ZG is a type of field effect transistor (FET) that is important to a wide range of applications. This device is a single N-channel MOSFET, meaning it operates as a single transistor, controlling current between two different voltage potentials. The NDF04N60ZG is built using advanced process techniques that enable the device to handle relatively large output currents, making it suitable for a variety of designs.
A field effect transistor, or FET, is a type of transistor that utilizes an amount of charge—or potential—to control current. In simplest terms, a FET consists of three terminal pins, a source, a drain and a gate. The source terminal is typically connected to a voltage source, while the drain is attached to a load. The gate is an input port for the FET, and acts as a switch for the entire device. When the gate receives a control voltage, it “opens” the FET’s source-drain path, allowing current from the source to flow through. When the gate is at zero voltage, the source is closed, effectively turning off the FET.
The NDF04N60ZG is a special type of FET known as a metal oxide semiconductor (MOSFET) which uses an oxide insulating layer between the gate and the channel to “trap” electrons, allowing the transistor to control larger currents with less power. The NDF04N60ZG boasts an 800V drain-source voltage, a 32A continuous drain current, and a fast switching speed—features that make the device ideal for controlling high-power applications, including motor drivers, audio amplifiers, and charging systems.
In addition to its power handling capability, the NDF04N60ZG excels in the area of design flexibility. Its fast switching time is ideal for high-frequency applications such as switching regulator designs and PWM control circuits. Furthermore, its low-voltage gate drive voltage and low-resistance channel allows the device to be placed in low-voltage DC-DC converter designs, where efficient power loss is important.
Thanks to its robust performance, the NDF04N60ZG is an attractive choice for designers seeking reliable and cost-effective power control solutions. Its fast switching time and large current-handling capability make it the perfect choice for high-power applications, while its low gate-to-source voltage and low on-resistance make it suitable for low-voltage DC-DC converter designs. Ultimately, the NDF04N60ZG provides designers with a versatile, flexible, and reliable solution for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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