NGTB75N65FL2WG Discrete Semiconductor Products

Power - Max:	595W
Supplier Device Package:	TO-247
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	80ns
Test Condition:	400V, 75A, 10 Ohm, 15V
Td (on/off) @ 25°C:	110ns/270ns
Gate Charge:	310nC
Input Type:	Standard
Switching Energy:	1.5mJ (on), 1mJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 75A
Current - Collector Pulsed (Icm):	200A
Current - Collector (Ic) (Max):	100A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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NGTB75N65FL2WG application field and working principle

Introduction to IGBTs

Insulated Gate Bipolar Transistors (IGBTs) are a type of transistor that combines the benefits of both Field Effect Transistors (FETs) and conventional bipolar junction transistors (BJTs). IGBTs offer high speed switch capabilities and low forward voltage drops. They contain an insulated gate that is used to control the flow of electrons when power is applied to the device. This makes them a very efficient power device.

Characteristics of IGBTs

IGBTs have a number of characteristics that make them an excellent choice for power applications. They have high switching frequencies, low gate drive power requirements, and low conduction losses. IGBTs are available in both positive temperature coefficient (PTC) and negative temperature coefficient (NTC) types. With PTC, the current flow increases with increasing temperature, while with NTC, the current flow decreases with increasing temperature. Another notable characteristic of IGBTs is their low on-state voltage drop, which makes them more energy efficient than other types of transistors.

Application fields of NGTB75N65FL2WG

The NGTB75N65FL2WG is a single insulated gate bipolar transistor (IGBT). It has a maximum voltage rating of 800V and a nominal current rating of 75A. This IGBT is suitable for a variety of applications including high-power switching, motor control, and inverters. It can be used in a variety of systems such as renewable energy systems, electric vehicles, power supplies, and grid-tied applications.

Working principle of NGTB75N65FL2WG

The NGTB75N65FL2WG is an IGBT which is composed of two parts: an insulated gate and a bipolar junction transistor. When the voltage is applied to the gate, electrons are attracted and pass through the gate, allowing current flow. The amount of current depends on the voltage applied to the gate. The gate voltage also affects the bipolar junction, allowing the current to flow in either forward or reverse.This is how the IGBT is used to switch circuit elements on and off.In summary, the NGTB75N65FL2WG is a single insulated gate bipolar transistor (IGBT) suitable for a variety of applications including high-power switching, motor control, and inverters. It has a wide range of features such as high switching frequencies, low gate drive power requirements, and low conduction losses. The IGBT works by switching current depending on the voltage applied to the gate, allowing for flexibility and efficient power control.

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