NGTG20N60L2TF1G Allicdata Electronics
Allicdata Part #:

NGTG20N60L2TF1GOS-ND

Manufacturer Part#:

NGTG20N60L2TF1G

Price: $ 2.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 40A 64W TO-3PF
More Detail: IGBT 600V 40A 64W Through Hole
DataSheet: NGTG20N60L2TF1G datasheetNGTG20N60L2TF1G Datasheet/PDF
Quantity: 180
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 1.86480
10 +: $ 1.67265
100 +: $ 1.34417
500 +: $ 1.10438
1000 +: $ 0.91505
Stock 180Can Ship Immediately
$ 2.05
Specifications
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Test Condition: 300V, 20A, 30 Ohm, 15V
Td (on/off) @ 25°C: 60ns/193ns
Gate Charge: 84nC
Input Type: Standard
Switching Energy: --
Power - Max: 64W
Series: --
Current - Collector Pulsed (Icm): 105A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The NGTG20N60L2TF1G is a silicon n-channel IGBT device that belongs to the Single-device family. It was produced by Infineon Technologies and is part of the OptiMOS 5 family of products. This device is ideal for power applications in automotive, medical, industrial and consumer electronics.

The NGTG20N60L2TF1G has a low on-state voltage, a high current capability and a low gate drive power to reduce overall system power consumption. It is capable of providing up to 600V of blocking voltage and has an operating temperature range of -40 to +150 degrees Celsius. The maximum continuous collector current is 20A. The maximum junction temperature of the device is 150 degrees celcius and the typical collector-emitter saturation voltage is 1.0V.

The working principle behind this device is the same as the one used in other IGBTs. When the gate is left open, there is no current flowing in the device. However, when a positive voltage signal is applied to the gate terminal, electrons are pulled from the n-channel area. This forces the electrons to move away from the gate and form a conductive path between the collector and the emitter. This allows current to flow through the device.

The NGTG20N60L2TF1G can be used in many different applications such as motor control, switched mode power supplies, light and lighting, automotive and automotive electronics, medical applications, and industrial applications. The device can be used for switching and protection applications, as well as for controlling and regulating power flow in systems where precise current and voltage control is required. The NGTG20N60L2TF1G is also suitable for high frequency, high temperature, and high power applications.

In summary, the NGTG20N60L2TF1G is an excellent choice for a wide range of applications in which precise control of current and voltage is needed. It is designed to provide excellent performance in terms of blocking voltage, conduction losses, gate drive power and temperature losses. The device is also robust and reliable, making it suitable for long-term use in hostile environments.

The specific data is subject to PDF, and the above content is for reference

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