| Allicdata Part #: | NGTG20N60L2TF1GOS-ND |
| Manufacturer Part#: |
NGTG20N60L2TF1G |
| Price: | $ 2.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT 600V 40A 64W TO-3PF |
| More Detail: | IGBT 600V 40A 64W Through Hole |
| DataSheet: | NGTG20N60L2TF1G Datasheet/PDF |
| Quantity: | 180 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | $ 1.86480 |
| 10 +: | $ 1.67265 |
| 100 +: | $ 1.34417 |
| 500 +: | $ 1.10438 |
| 1000 +: | $ 0.91505 |
| Vce(on) (Max) @ Vge, Ic: | 1.65V @ 15V, 20A |
| Package / Case: | TO-3P-3 Full Pack |
| Mounting Type: | Through Hole |
| Operating Temperature: | 175°C (TJ) |
| Test Condition: | 300V, 20A, 30 Ohm, 15V |
| Td (on/off) @ 25°C: | 60ns/193ns |
| Gate Charge: | 84nC |
| Input Type: | Standard |
| Switching Energy: | -- |
| Power - Max: | 64W |
| Series: | -- |
| Current - Collector Pulsed (Icm): | 105A |
| Current - Collector (Ic) (Max): | 40A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | -- |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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The NGTG20N60L2TF1G is a silicon n-channel IGBT device that belongs to the Single-device family. It was produced by Infineon Technologies and is part of the OptiMOS 5 family of products. This device is ideal for power applications in automotive, medical, industrial and consumer electronics.
The NGTG20N60L2TF1G has a low on-state voltage, a high current capability and a low gate drive power to reduce overall system power consumption. It is capable of providing up to 600V of blocking voltage and has an operating temperature range of -40 to +150 degrees Celsius. The maximum continuous collector current is 20A. The maximum junction temperature of the device is 150 degrees celcius and the typical collector-emitter saturation voltage is 1.0V.
The working principle behind this device is the same as the one used in other IGBTs. When the gate is left open, there is no current flowing in the device. However, when a positive voltage signal is applied to the gate terminal, electrons are pulled from the n-channel area. This forces the electrons to move away from the gate and form a conductive path between the collector and the emitter. This allows current to flow through the device.
The NGTG20N60L2TF1G can be used in many different applications such as motor control, switched mode power supplies, light and lighting, automotive and automotive electronics, medical applications, and industrial applications. The device can be used for switching and protection applications, as well as for controlling and regulating power flow in systems where precise current and voltage control is required. The NGTG20N60L2TF1G is also suitable for high frequency, high temperature, and high power applications.
In summary, the NGTG20N60L2TF1G is an excellent choice for a wide range of applications in which precise control of current and voltage is needed. It is designed to provide excellent performance in terms of blocking voltage, conduction losses, gate drive power and temperature losses. The device is also robust and reliable, making it suitable for long-term use in hostile environments.
The specific data is subject to PDF, and the above content is for reference
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NGTG20N60L2TF1G Datasheet/PDF