NSBA114TF3T5G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	254mW
Mounting Type:	Surface Mount
Package / Case:	SOT-1123
Supplier Device Package:	SOT-1123
Base Part Number:	NSBA1*

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.NSBA114TF3T5G Application Field and Working PrincipleThe N-channel enhancement mode Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) field effect transistor (FET) named NSBA114TF3T5G (commonly abbreviated as NSBA114) is a pre-biased transistor designed to switch and amplify electronic signals. NSBA114TF3T5G belongs to the Transistors - Bipolar (BJT) - Single, Pre-Biased family.NSBA114TF3T5G is a popular choice for applications that require exceptional performance under high frequency and extreme temperature conditions. Traditional transistors can often reach the limit of their capabilities when handling high speed, high temperature applications and this is where the advantage of the NSBA114 lies.The main advantage is its ability to provide very high switching speed and reliable AC characteristics even in harsh environmental conditions. Due to its wide operating range and excellent power characteristics, it is also widely used for RF, broadband, and high-temperature switching applications.NSBA114TF3T5G consists of a control gate and a drain gate. Its size, speed and power capabilities are slightly better than conventional FETs (Field Effect Transistors). The control gate allows for faster switching speeds, whereas the drain gate allows for improved temperature stability and enhanced performance at high temperature operating conditions.In terms of its working principle, NSBA114 is a power electronic device. It acts as a switch, opening and closing a circuit depending on the input signal applied to it. In order to operate, the transistor needs a power source, a control voltage, and a Gate-Source voltage. When the Gate-Source voltage is applied, the transistor conducts current between the Drain and Source terminals, thus allowing the input current to flow.The operation of the NSBA114 can be further improved by using emitter-follower topologies. This is because this structure can provide an improved level of accuracy and stability at higher frequencies, and also reduce the power dissipation by increasing the device operation temperature.In conclusion, the NSBA114TF3T5G is an excellent device for applications that require high frequency and extreme temperature conditions. Its small size, high speed, and superior power characteristics make it a highly reliable and efficient choice for a variety of RF, broadband, and high-temperature switching applications. It is also designed to provide a wide range of performance improvements over conventional transistors, including improved level of accuracy and stability at higher frequencies.

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