NSBA143ZDXV6T5G Allicdata Electronics
Allicdata Part #:

NSBA143ZDXV6T5G-ND

Manufacturer Part#:

NSBA143ZDXV6T5G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.5W SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: NSBA143ZDXV6T5G datasheetNSBA143ZDXV6T5G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Base Part Number: NSBA1*
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NSBA143ZDXV6T5G is a type of array of pre-biased bipolar junction transistors (BJTs). It is a 4-pin discrete device and features a minimum of 4 independent emitters, four independent collectors and integrated pre-biased resistors. This device is widely used in the telecommunications, automotive and consumer electronics industries, where the small size and low offset of the device makes it a perfect fit for many different applications.

The pre-biased transistors in this type of array are designed to have an internal resistance bias already built into the transistors, which gives them better linear performance than other types of single transistor BJTs. This internal bias also allows for multiple transistors in the array to be fired together, thus providing a more consistent output from the device.

In addition to having pre-biased resistors, the device also features a built-in capacitance for improved linearity and further decreased power consumption. This capacitance works in the same way as a capacitor does, allowing for a more efficient power transfer from the power pins to the collector pins of the transistors, thus reducing power consumption substantially. This can be especially beneficial in applications that require very small amounts of current, as the overall efficiency of the device can be drastically increased.

The device also features integrated switching circuitry, which eliminates the need for additional external circuitry. This circuitry allows for the device to be switched on or off without the need for an external switch, and can reduce power consumption substantially. For added convenience, this integrated circuitry also features error detection and protection, which can be beneficial in applications that require reliable performance.

The device also features a low offset of up to 0.3V, which allows for a low voltage drop in the output, thus decreasing power consumption substantially. This low voltage drop is beneficial for applications that require a low output voltage but have limited space for other components. Additionally, this low voltage drop also reduces the power consumption of the device significantly, resulting in improved efficiency and reliability.

In conclusion, the NSBA143ZDXV6T5G array of pre-biased transistors is a versatile device with a wide range of applications due to its small size and low offset. Its integrated pre-biased resistors, low voltage drop, and built-in switching circuitry make it an ideal choice for many different applications, while its integrated capacitance and error detection and protection provide added benefits in terms of reliability and efficiency. Therefore, it is a great choice for many different applications in the telecommunications, automotive and consumer electronics industries.

The specific data is subject to PDF, and the above content is for reference

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