NSCT817-25LT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 100mA, 1V
Power - Max:	225mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	NSCT817

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Introduction

NSCT817-25LT1G is a high performance NPN transistor manufactured by ON Semiconductor. It is a single common-emitter transistor commonly used for moderate to high power linear, switching and DC to DC converter applications. The structure of the transistor is designed in such a way that provides low capacitance and low parasitic effects, making it suitable for high-frequency operation. This makes NSCT817-25LT1G suitable for a variety of applications.

Application Field

NSCT817-25LT1G is commonly used in applications such as high and low power amplifiers, power switching, audio switching, video switching and DC-DC converters. It provides excellent high-frequency performance up to 12MHz with low output capacitance and low parasitic effects. As such, it is widely used in high frequency analog circuits such as mixers, oscillators and amplifiers, and in many DC-DC converter applications. It can also be used in low power analog applications such as logic inverters, logic drivers, small signal switches and power MOSFET/IGBT drivers.

Operating Parameters

NSCT817-25LT1G is a NPN transistor with a maximum collector-emitter voltage of 50V and a package voltage of -65V. It has a maximum collector current of 1A and maximum power dissipation of 11W. The device also has a maximum frequency of 12MHz, making it suitable for high frequency applications.

Features

NSCT817-25LT1G offers several features which make it suitable for a wide range of applications. It has low output capacitance and low parasitic effects, making it suitable for high-frequency operation. It also has a high surge capability and superior thermal performance, making it suitable for a variety of applications. Additionally, it has a package voltage of -65V, making it suitable for low power analog applications.

Advantages and Disadvantages

NSCT817-25LT1G offers several advantages over other transistors, such as its excellent high-frequency performance and its low output capacitance and low parasitic effects. Additionally, it has a high surge capability and superior thermal performance, making it suitable for a variety of applications.However, it also has some disadvantages, such as its limited frequency, which makes it unsuitable for some applications. Additionally, it has a package voltage of -65V, which may not be suitable for some applications.

Working Principle

NSCT817-25LT1G operates as a NPN transistor, meaning that current flows from the emitter to the collector when a voltage is applied to the base. This current flow is a result of minority carriers, which are electrons and hole carriers, passing from the emitter to the collector. The size of the current is determined by the bias voltage applied to the base, which creates an electrostatic field in the transistor. This field increases the number of minority carriers in the base, allowing more carriers to flow through the collector-emitter region.

Conclusion

NSCT817-25LT1G is a high performance NPN transistor that is often used in applications such as high and low power amplifiers, power switching, audio switching, video switching and DC-DC converters. It is suitable for a variety of applications due to its excellent high-frequency performance, low output capacitance and low parasitic effects. Additionally, it has a high surge capability and superior thermal performance. Despite some of its disadvantages, such as its limited frequency, NSCT817-25LT1G is a reliable and robust transistor for a variety of applications.

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