NSS1C201MZ4T3G Discrete Semiconductor Products |
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Allicdata Part #: | NSS1C201MZ4T3GOSTR-ND |
Manufacturer Part#: |
NSS1C201MZ4T3G |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 100V 2A SOT223-4 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 2A 100MHz 800mW ... |
DataSheet: | NSS1C201MZ4T3G Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.13750 |
8000 +: | $ 0.12863 |
12000 +: | $ 0.11976 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 180mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 500mA, 2V |
Power - Max: | 800mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | NSS1C201 |
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NSS1C201MZ4T3G is a single Bipolar Junction Transistor (BJT) device, commonly used in applications where a low power signal needs to be amplified or switched on/off. This type of transistor consists of two p-type materials sandwiches between n-type materials, forming a three-terminal device. It has emitter, collector, and base contacts.
The working principle of the NSS1C201MZ4T3G is that current carriers, electrons and holes, can be controlled by voltage. When the base voltage is set to a certain level, the electrons and holes flow through the device, causing current to flow from collector to emitter, which is used to amplify a signal. The NSS1C201MZ4T3G is used in many different applications, such as high speed switching and amplifier circuits, since it can provide a high gain during the on-state due to its well-designed structure.
It is also well suitable for use in low-noise, low power, and low-speed amplification applications. 0.1mA current can be amplified up to 45mA, and with an input current as low as 0.1mA it can switch up to 85mA in just 1 uS. It also has low noise, low distortion and fast switching speed, making it well suited for radio frequency (RF) and video applications. One such use is in radio transmitters, where the NSS1C201MZ4T3G provides efficient tuning, modulation, and amplification of the signal.
The NSS1C201MZ4T3G is also excellent for use in many other applications, such as in LED flashers, where its high-speed switching can provide rapid on/off control. It is also used in AC power switching, control systems, and signal processing circuits. Its low-noise and low-power characteristics make it well-suited for use in digital circuits and audio systems.
In conclusion, the NSS1C201MZ4T3G is an excellent example of a bipolar junction transistor device. With its high speed switching and versatile usage, this type of transistor is used in a variety of applications, from LED flashers and audio processing equipment to RF communication equipment. Its numerous features and capabilities make it a reliable and versatile choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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