NSS35200MR6T1G Allicdata Electronics

NSS35200MR6T1G Discrete Semiconductor Products

Allicdata Part #:

NSS35200MR6T1GOSTR-ND

Manufacturer Part#:

NSS35200MR6T1G

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 35V 2A TSOP-6
More Detail: Bipolar (BJT) Transistor PNP 35V 2A 100MHz 625mW S...
DataSheet: NSS35200MR6T1G datasheetNSS35200MR6T1G Datasheet/PDF
Quantity: 3000
3000 +: $ 0.09223
6000 +: $ 0.08664
15000 +: $ 0.08105
30000 +: $ 0.07453
Stock 3000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 35V
Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: NSS35200
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NSS35200MR6T1G transistor is one of the most versatile and widely used type of transistors, because of its prevalence in a wide variety of different applications. In this article, we will discuss the application field and working principle behind the NSS35200MR6T1G, as well as its features and technical characteristics.

The NSS35200MR6T1G is a single bipolar transistor, also known as a n-channel, pseudomorphic high electron mobility transistor (HEMT). It is a type of field-effect transistor (FET), whose operation is based on the electrical characteristics of a semiconductor. Its primary purpose is to act as an amplifier. It can be used as a power amplifier, voltage amplifier or current amplifier, depending on the application. It is also often used as a switch for digital logic circuits, due to its low power consumption and fast switching speeds.

The NSS35200MR6T1G has a range of features which make it suitable for a variety of different applications. One of the key features is its high frequency performance. It operates in the range of frequencies between 600MHz and 3GHz, making it extremely suitable for high-frequency applications such as microwave and radio applications. It also has a high current gain, low noise figure, low distortion and high efficiency.

In terms of its working principle, the NSS35200MR6T1G transistor works by using a gate to control the flow of electrons between two regions. In the n-channel FET, the electrons flow from the source to the drain when the gate voltage is positive and higher than a certain threshold voltage. When the gate is zero or negative, then the electrons won’t flow. This type of transistor is especially useful when driving high-power applications.

The NSS35200MR6T1G is most commonly used in telecommunications, automotive, consumer electronics and aerospace applications. In the telecommunications field, it is often used in the construction of microwave transceivers, base stations and mobile transmitters. The automotive industry also uses it in several applications, including airbag deployment and engine control. Consumer electronics also utilize the NSS35200MR6T1G in various devices such as digital cameras, cell phones and PDAs. Finally, the aerospace industry has been using the NSS35200MR6T1G in satellite, radar and avionic systems.

In conclusion, the NSS35200MR6T1G is a versatile type of transistors, which can be used in a wide range of applications due to its powerful characteristics and features. Its working principle of using a gate to control the flow of electrons makes it especially suitable for high-power applications. Its range of applications include telecommunications, automotive, consumer electronics and aerospace, among many others.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "NSS3" Included word is 10
Part Number Manufacturer Price Quantity Description
NSS35200CF8T1G ON Semicondu... 0.13 $ 1000 TRANS PNP 35V 2A 8CHIPFET...
NSS30070MR6T1G ON Semicondu... -- 1000 TRANS PNP 30V 0.7A SC74-6...
NSS35200MR6T1G ON Semicondu... 0.11 $ 3000 TRANS PNP 35V 2A TSOP-6Bi...
NSS30071MR6T1G ON Semicondu... 0.11 $ 1000 TRANS NPN 30V 0.7A SC74-6...
NSS30201MR6T1G ON Semicondu... 0.13 $ 3000 TRANS NPN 30V 2A TSOP-6Bi...
NSS30100LT1G ON Semicondu... -- 1000 TRANS PNP 30V 1A SOT-23Bi...
NSS30101LT1G ON Semicondu... 0.08 $ 1000 TRANS NPN 30V 1A SOT-23Bi...
NSS3-WH Eaton 2.55 $ 1000 CONN BARRIER STRIP 3CIRC ...
NSS3-BK Eaton 2.81 $ 1000 CONN BARRIER STRIP 3CIRC ...
NSS3CS-WH Eaton 2.93 $ 1000 TERM BLOCK W/COMBO SCREW
Latest Products
BC807-16W/MIX

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

BC807-16W/MIX Allicdata Electronics
CP547-MJ11015-CT

TRANS PNP DARL 30A 120V DIEBipolar (BJT)...

CP547-MJ11015-CT Allicdata Electronics
CP547-CEN1103-WS

TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...

CP547-CEN1103-WS Allicdata Electronics
TIP35C SL

TRANS GENERAL PURPOSE TO-218Bipolar (BJT...

TIP35C SL Allicdata Electronics
JAN2N3634

TRANS PNP 140V 1ABipolar (BJT) Transisto...

JAN2N3634 Allicdata Electronics
BULB7216-1

TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...

BULB7216-1 Allicdata Electronics