NSS35200MR6T1G Discrete Semiconductor Products |
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Allicdata Part #: | NSS35200MR6T1GOSTR-ND |
Manufacturer Part#: |
NSS35200MR6T1G |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 35V 2A TSOP-6 |
More Detail: | Bipolar (BJT) Transistor PNP 35V 2A 100MHz 625mW S... |
DataSheet: | NSS35200MR6T1G Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.09223 |
6000 +: | $ 0.08664 |
15000 +: | $ 0.08105 |
30000 +: | $ 0.07453 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 35V |
Vce Saturation (Max) @ Ib, Ic: | 310mV @ 20mA, 2A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1.5A, 1.5V |
Power - Max: | 625mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | 6-TSOP |
Base Part Number: | NSS35200 |
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The NSS35200MR6T1G transistor is one of the most versatile and widely used type of transistors, because of its prevalence in a wide variety of different applications. In this article, we will discuss the application field and working principle behind the NSS35200MR6T1G, as well as its features and technical characteristics.
The NSS35200MR6T1G is a single bipolar transistor, also known as a n-channel, pseudomorphic high electron mobility transistor (HEMT). It is a type of field-effect transistor (FET), whose operation is based on the electrical characteristics of a semiconductor. Its primary purpose is to act as an amplifier. It can be used as a power amplifier, voltage amplifier or current amplifier, depending on the application. It is also often used as a switch for digital logic circuits, due to its low power consumption and fast switching speeds.
The NSS35200MR6T1G has a range of features which make it suitable for a variety of different applications. One of the key features is its high frequency performance. It operates in the range of frequencies between 600MHz and 3GHz, making it extremely suitable for high-frequency applications such as microwave and radio applications. It also has a high current gain, low noise figure, low distortion and high efficiency.
In terms of its working principle, the NSS35200MR6T1G transistor works by using a gate to control the flow of electrons between two regions. In the n-channel FET, the electrons flow from the source to the drain when the gate voltage is positive and higher than a certain threshold voltage. When the gate is zero or negative, then the electrons won’t flow. This type of transistor is especially useful when driving high-power applications.
The NSS35200MR6T1G is most commonly used in telecommunications, automotive, consumer electronics and aerospace applications. In the telecommunications field, it is often used in the construction of microwave transceivers, base stations and mobile transmitters. The automotive industry also uses it in several applications, including airbag deployment and engine control. Consumer electronics also utilize the NSS35200MR6T1G in various devices such as digital cameras, cell phones and PDAs. Finally, the aerospace industry has been using the NSS35200MR6T1G in satellite, radar and avionic systems.
In conclusion, the NSS35200MR6T1G is a versatile type of transistors, which can be used in a wide range of applications due to its powerful characteristics and features. Its working principle of using a gate to control the flow of electrons makes it especially suitable for high-power applications. Its range of applications include telecommunications, automotive, consumer electronics and aerospace, among many others.
The specific data is subject to PDF, and the above content is for reference
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