NSVBC847BTT1G Allicdata Electronics
Allicdata Part #:

NSVBC847BTT1G-ND

Manufacturer Part#:

NSVBC847BTT1G

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.1A SC75
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 200m...
DataSheet: NSVBC847BTT1G datasheetNSVBC847BTT1G Datasheet/PDF
Quantity: 1000
1 +: $ 0.03200
10 +: $ 0.03104
100 +: $ 0.03040
1000 +: $ 0.02976
10000 +: $ 0.02880
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416
Description

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NSVBC847BTT1G belongs to the category of Transistors - Bipolar (BJT) - Single. It is a high-efficiency, low-cost, small-signal BJT. This single-chip power transistor has a wide range of features and applications.

The principle of operation of NSVBC847BTT1G is based on the well-known bipolar junction theory. With the use of an NPN bipolar transistor, it relies on the current through its base to control the collector-emitter current. When current is passed through the base, a base-emitter junction is formed between the collector and base, causing the collector and emitter to become more conductive. This process allows large-signal current to flow from collector to emitter when it is properly biased. Furthermore, this chip also utilizes the gain and frequency characteristics of the transistor to achieve wideband amplification of signals, allowing higher bandwidths. As a result, this device is widely used in applications spanning from quick switching in amplifiers to high-voltage and high-frequency amplification.

NSVBC847BTT1G offers superior performance and is a popular choice for those requiring a high-efficiency, cost-effective, and reliable device. Its high power capability and wide operating temperature range make it ideal for automotive, industrial and aerospace applications. Its high gain, low noise, and high-speed switching characteristics make it suitable for many signal-conditioning, audio-amplifier, and other switching applications. It can also be used in power systems to switch high-current and power supplies, as well as powerful motors. This versatile device is also widely used for applications such as high-accuracy, high-temperature current measurements and control circuits.

NSVBC847BTT1G is an ideal choice for those looking for a high-efficiency, low-cost, reliable, and small-signal BJT. Its wide applications, such as automotive, aerospace, industrial and audio-amplifier applications, make it a great device for those requiring a cost-effective and reliable device. Furthermore, its high power capability and wide operating temperature range make it suitable for many different applications. This device is a great choice for those who require high-accuracy current measurements, control systems, and powerful motors.

The specific data is subject to PDF, and the above content is for reference

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