NSVDTA113EM3T5G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	1 kOhms
Resistor - Emitter Base (R2):	1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 5mA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	260mW
Mounting Type:	Surface Mount
Package / Case:	SOT-723
Supplier Device Package:	SOT-723

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The NSVDTA113EM3T5G is a single pre-biased transistor device, commonly classified as a bipolar junction transistor (BJT). This device has a multitude of uses and applications, most notably in controlling large amounts of current or voltage. This article covers fact about the NSVDTA113EM3T5G, its application field, and its working principle.The NSVDTA113EM3T5G is designed to provide greater performance than other solutions. It is a low-power bipolar transistor designed for use with low-voltage, low-current applications. It\'s designed to have a high breakdown voltage, high current gain, low input capacitance, and high current gain. It is also capable of operating at high temperatures.The NSVDTA113EM3T5G is commonly used in applications that require a high performance solution at a low cost. It is most commonly used in audio amplifiers and other audio applications, high-speed switching applications, and power applications. It is also used in voltage regulation and feedback circuits, and in automotive applications.The most important element affecting the performance of the NSVDTA113EM3T5G is its working principle. The NSVDTA113EM3T5G operates by the combination of its two transistors, referred to as the base and the collector. The working principle of the device is similar to an ordinary transistor, with the collector and base forming an PNP structure. The base is supplied with a bias voltage, usually between 0 and 5V, and the collector receives an input signal from an external voltage source.The current flow through the device is controlled by the ratio of the bias voltage to the collector voltage. When current is found to pass through the device, it is then controlled by the base voltage.The performance of the NSVDTA113EM3T5G is largely dependent on its working principle. When the device is used in a low-voltage, low-current application, the transistor can maintain its performance even under high temperature. In high-speed switching applications, the device\'s high current gain and low input capacitance allow for rapid switching of high-frequency signals. Furthermore, its high breakdown voltage and high current gain means it can be used in a wide variety of voltage regulation and feedback applications.Overall, the NSVDTA113EM3T5G is a versatile, high-performance single pre-biased transistor device. It is most notably used in audio amplifiers and other audio applications, high-speed switching applications, and power applications. It\'s also used in voltage regulation and feedback circuits, and in automotive applications. Its combination of high current gains, low input capacitances, and high breakdown voltages make it ideal for a wide range of applications and performance requirements.

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