NSVMUN5332DW1T1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	--
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363

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NSVMUN5332DW1T1G Application Field and Working PrincipleNSVMUN5332DW1T1G is a three-terminal, pre-biased, high-voltage, N-channel array transistor, specifically designed for high voltage applications, such as motor control, automotive, industrial, telecom and consumer applications. This device integrates six N-channel MOSFETs in an 8-lead SOIC surface mount package for improved compactness and EMC compatibility. Furthermore, the NSVMUN5332DW1T1G features on-resistance and current handling capability for improved power efficiency and system reliability.The NSVMUN5332DW1T1G is an pre-biased transistor that features high voltage resilience of 30V, breakdown voltage of 30V as well as a low on-resistance of 18.3Ω @ VGS=3.3V. These properties make the NSVMUN5332DW1T1G ideal for applications where high voltage switches and high power levels must be activated, while at the same time limiting current consumption at a desirable level.Moreover, the package of NSVMUN5332DW1T1G is the small 8-lead SOIC (Small Outline Integrated Circuit) package, which has the weight of merely 0.39g, while the miniature size of the case, helps in the optimization of the electronic system structure. The additional advantage of such a packaging design is that it is robust, ensuring a greater degree of product safety and reliability.The working principle of the NSVMUN5332DW1T1G is based on a classic MOSFET topology. A MOSFET is composed of four terminals: drain (D), gate (G), source (S) and body (B). The NSVMUN5332DW1T1G consists of six N-channel MOSFETs integrated in an 8-lead SOIC package, which are connected in parallel for increased current handling capability. When the gate is applied a negative voltage, the transistors switch on, allowing current to flow from the drain to the source. When the gate is not biased, the transistors switch off, not allowing current to flow.The NSVMUN5332DW1T1G is suitable for various applications such as camera flash circuits, motor control, battery chargers, UPS, automotive and automotive automation systems, industrial automation and other digital signal circuits. The combination of advanced technologies and unique packaging, allows this device to offer superior performance and superior EMC noise immunity, while maintaining low on-resistance and high voltage resilience.

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