NTB23N03R Allicdata Electronics
Allicdata Part #:

NTB23N03R-ND

Manufacturer Part#:

NTB23N03R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 25V 23A D2PAK
More Detail: N-Channel 25V 23A (Ta) 37.5W (Tj) Surface Mount D2...
DataSheet: NTB23N03R datasheetNTB23N03R Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V
FET Feature: --
Power Dissipation (Max): 37.5W (Tj)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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The NTB23N03R is a N-channel enhancement mode Field-Effect Transistor (FET). This device is designed specifically for telecom, computer and battery-powered applications, automotive and general purpose applications. It is designed to operate up to offer great stability and performance in a wide variety of applications. The device is manufactured by the Rohm Semiconductor Company.

Device Features

The NTB23N03R has a number of important features. These include a drain current rating of 4A and source-drain voltage rating of 20V. It has a fast switching speed for its size and a low drain-source on-resistance of 11ohm. It also has an ultra-low gate-source capacitance of 2pF, allowing for a very low RDS(ON) performance. The device is also temperature compensated to ensure excellent performance in high temperatures. The turn-on delay is also extremely low and the on-resistance of the device is reduced significantly at low temperatures.

Application Field and Working Principle

The NTB23N03R is typically used as a power switch in battery-powered applications. It can also be used in a variety of applications such as high-side switch applications, motor control, and power management applications. It is a great choice for automotive applications because it has a low on-resistance and a temperature compensated design.

The NTB23N03R is a single N-channel enhancement mode MOSFET transistor. In this type of device, the gate-source voltage controls the current flow between the source and drain. By adjusting the voltage on the gate, the current flow can be adjusted, which in turn controls the voltage between the source and drain.

When the gate voltage is low, the device is off and current flows from the drain to the source. When the gate voltage is increased, the current flow is starting to increase and when it reaches a certain thresholds it increases dramatically – this is the “gate threshold voltage”. This is when the device begins to conduct current in a linear fashion.

The NTB23N03R has a very low gate threshold voltage, allowing for better control over the current flow. This is especially important in battery-powered applications, where low on-resistance and switchable current control are key. It also has a low capacitance, meaning it can turn on faster than other comparable devices. This makes it great for high-side switch and motor control applications, where switching speed is important.

The NTB23N03R is an excellent choice for designs that require excellent low on-resistance and high switching speed. It is well-suited for automotive and battery-powered applications, and it can also be used for various power management and motor control applications. With its low threshold voltage and low capacitance, the device provides excellent control over current flow without compromising on switching times.

The specific data is subject to PDF, and the above content is for reference

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