NTB23N03RT4G Discrete Semiconductor Products |
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Allicdata Part #: | NTB23N03RT4GOSTR-ND |
Manufacturer Part#: |
NTB23N03RT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 23A D2PAK |
More Detail: | N-Channel 25V 23A (Ta) 37.5W (Tj) Surface Mount D2... |
DataSheet: | NTB23N03RT4G Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.76nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 225pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 37.5W (Tj) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
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Introduction
The NTB23N03RT4G is a single MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) device with a monolithic construction. It is intended for a wide range of applications and is designed to be robust and reliable. This article will discuss the application fields and the working principle of the NTB23N03RT4G.Application
The NTB23N03RT4G is a general purpose transistor for a wide range of applications. It is commonly used in switching applications, such as in power supplies, motor control, home appliances, and car electronics. It is also used for signal conditioning, such as in radio frequency (RF) amplifiers, RF switches, and digital signal processing (DSP).The most common application for the NTB23N03RT4G is in switch mode power supplies (SMPS). Its fast switching capabilities and low power losses allow it to be an ideal choice for these low voltage DC/DC converters. It can also be used in the high-temperature environment of motor control applications, where its low thermal resistance and high breakdown voltage come in handy. Finally, the NTB23N03RT4G is often used for providing protection for sensitive consumer electronics. Its high gate capacitance ensures a stable low-voltage threshold and its high common mode rejection ratio (CMRR) ensures reliable protection from unwanted signals.Technology
The NTB23N03RT4G is a monolithic Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) device which employs advanced trench technology to provide superior static and dynamic characteristics. Its standard package includes protection devices such as an over-temperature protection circuit, a level-shift circuit, and an over-current protection circuit. The NTB23N03RT4G has an on-resistance of only 18 mΩ and a maximum current rating of 4A. It has a switching speed of 300kHz and a low gate-to-source capacitance of only 0.1nF. It also has a breakdown voltage of 35V which ensures reliable protection for applications that need to handle voltage spikes.Working Principle
The NTB23N03RT4G performs its switching operation by applying a voltage to its gate terminal. When a positive voltage is applied, a body diode consisting of the source and drain junctions is turned on and the MOSFET enters the active region. The current then flows from the drain to the source and the MOSFET is in the on-state. When a negative voltage is applied, the MOSFET is forced into the off-state and the current stops flowing. The body diode prevents reverse current from flowing, so the MOSFET stays off until a positive voltage is applied again. This regular cycling process is called the switching operation or switching cycle and it is the primary function of the NTB23N03RT4G.Conclusion
The NTB23N03RT4G is a versatile and reliable MOSFET device and it is intended for a wide range of applications. Its superior static and dynamic characteristics make it a great choice for power supplies, motor control applications, and for providing protection for consumer electronics. Its on-resistance of 18 mΩ and maximum current rating of 4A make it an ideal choice for switch mode power supplies, and its low gate-to-source capacitance of 0.1nF ensures a stable low-voltage threshold. Finally, its breakdown voltage of 35V ensures reliable protection from unwanted signals.The specific data is subject to PDF, and the above content is for reference
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