Allicdata Part #: | NTD110N02RST4G-ND |
Manufacturer Part#: |
NTD110N02RST4G |
Price: | $ 0.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 24V 100A DPAK |
More Detail: | MOSFET N-CH 24V 100A DPAK |
DataSheet: | NTD110N02RST4G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.33472 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The NTD110N02RST4G is an enhancement mode power MOSFET transistor specifically designed for switching and load control applications. It is one of the newer “atmospheric pressure” enhancement mode transistors, or ESM, which provide longer-term reliability due to their large ESD protection capability, higher power dissipation, faster switching speed, and lower on-state resistance.
Application Field
The NTD110N02RST4G can be used for a variety of applications including power switching in switch mode power supplies, DC-DC converters, lighting controls, motor controls, solar inverters, and more. It can be used for both AC and DC loads, and is especially suitable for high side switching of hot relays, motors and other industrial applications.
Features
The NTD110N02RST4G features high ESD protection (8kV HBM/6kV CDM) and high surge capabilities (2.28A) combined with its low on-state resistance (RDSon) and low maintenance costs. Its fast switching capability makes it ideal for high-end switching applications such as DC-DC converters. With its wide drain current (ID) range of 110A, it proves to be a very efficient and powerful power switching solution.
Working Principle
The NTD110N02RST4G works like any other power MOSFET transistor. When current is flowing through the gate, it creates an electrostatic field, which attracts the electrons from the holes of the channel region, thus creating a conductive path between the source and the drain. When the size of this field is enlarged enough, the conduction channel will start conducting and the voltage across the transistor will drop. By adjusting the size of the electrostatic field and appropriately controlling the level of current received, device operations can be carefully managed in order to get the desired switching performance.
Advantages
The main advantage of the NTD110N02RST4G is its fast switching ability. Additionally, it has better thermal stability than most other MOSFET transistors, meaning it will not easily overheat or fail due to temperature fluctuations. Its extremely low on-state resistance also improves power efficiency and overall power supply performance.
Conclusion
The NTD110N02RST4G is a high performance enhancement-mode power MOSFET transistor meant for switching and load control applications. Its high ESD protection, fast switching speed, high surge capabilities and low on-state resistance make it ideal for a wide range of applications, and its thermal stability helps ensure reliable operation over time.
The specific data is subject to PDF, and the above content is for reference
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