NTD4860NA-35G

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-251-3 Stub Leads, IPak
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.28W (Ta), 50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1308pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:	21.8nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	7.5 mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C:	10.4A (Ta), 65A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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NTD4860NA-35G Application Field and Working Principle

NTD4860NA-35G is a type of insulated gate bipolar transistor (IGBT) —a high-power transistor that combines the best of both MOSFETS and bipolar transistors, making it a highly efficient and reliable device for many applications. It is part of a larger family of IGBTs, the NTD4-series, which offer a range of current ratings up to 65 A. This article will discuss the application field for NTD4860NA-35G transistors and the working principle behind them.

Application Fields for NTD4860NA-35G Transistors

NTD4860NA-35G transistors are most commonly used in motor drives, power converters and power supplies, as they are able to provide high efficiency, high frequency, low switching losses, and good surge capability. They are frequently used in applications such as uninterruptible power supplies, three-phase inverters, and welders, due to their ability to provide stable output power and minimize distortion in the supply current. They are also frequently used in renewable energy applications, such as in wind turbines and solar energy systems, where they can provide high efficiency and reliability in power conversion.

Working Principle of NTD4860NA-35G Transistors

NTD4860NA-35G transistors use the principle of insulated gate bipolar transistor (IGBT) technology. This type of transistor combines the best of both MOSFETs and bipolar transistors, and works by combining the input of a gate terminal with the output of a bipolar junction transistor. In this way, it is able to provide both the high power capability of a MOSFET as well as the fast switching speed and low on-resistance of a bipolar junction transistor. When a voltage is applied to the gate terminal of the NTD4860NA-35G transistor, it begins to conduct current between both the emitter and the collector, allowing power to be transferred between them. As the voltage is increased, the transistor will begin to saturate and will reach an “on” state, allowing the maximum amount of current to flow. When the voltage is removed, the transistor will switch off, and the power will no longer be transferred. In addition to its fast switching speed and low on-resistance, NTD4860NA-35G transistors are also well suited for use in applications which require high power, such as motor drives and power converters. This is because the transistors have a high current capability and can provide up to 65 A of output current. The device also has a wide operating temperature range of -40°C to +125°C, making it an ideal choice for many demanding applications.

Conclusion

NTD4860NA-35G transistors are one of the most commonly used IGBTs, and are typically used in applications such as motor drives, power converters, and renewable energy systems. They use the principle of IGBT technology, which combines the input of a gate terminal with the output of a bipolar junction transistor, and are able to provide high power, fast switching speed, and low on-resistance. The device has a high current capability, up to 65 A of output current, and a wide operating temperature range of -40°C to +125°C, making it an ideal choice for many demanding applications.

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