NTD6415ANLT4G Discrete Semiconductor Products

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NTD6415ANLT4G is a single-channel N-channel low-side power MOSFET, this MOSFET device offers an attribute of ultra-low on-resistance, very good channel resistance. The NTD6415ANLT4G has a continuous drain current of 8.0A and drain-source voltage of 18V. The NTD6415ANLT4G features an integrated gate resistor, this feature is beneficial for paralleling or “hot swap” applications. The gate driver is equipped with a sensing pin that senses the real drain-source voltage. This feature allows the device to turn on safely and minimizes the spiked power dissipation when operating at high-current applications.

The NTD6415ANLT4G application field includes high-side and low-side power switches, current sensing, hot swap circuits and general purpose devices. The NTD6415ANLT4G application area also includes battery switching (as a charger/discharger switch, or Li-ion battery monitor), adjustable voltage regulators, motor drive applications, power stages, and power conversion, such as buck and boost circuits. The NTD6415ANLT4G is available in a space-saving 3x3x0.9mm LGA package.

The NTD6415ANLT4G working principles are based on the basic MOSFET structure. The NTD6415ANLT4G has source, drain and gate three terminals that connect to a dielectric layer, or insulation layer, on either sides of the substrate. A voltage is applied to the gate terminal, which, in turn, enables a small current to flow between the source and drain terminals. This is known as the "on-state" or "conductive" state, and it is all driven by the amount of voltage applied to the gate terminal. When the gate terminal\'s voltage is turned off, the current will reduce to zero and this is known as the "off-state" of the MOSFET. The NTD6415ANLT4G also offers an integrated gate resistor, which allows for safe turn-on and minimizes the power dissipation, especially in high current environments.

The NTD6415ANLT4G is an excellent choice for applications demanding low on-resistance and low gate charge for a single-channel low-side power MOSFET. Its built-in gate resistor saves board space, adds flexibility and reduces system cost. The combination of high performance and small size makes this device ideal for applications in battery charging, adjustable regulators, motor drives, power stages, and power conversion circuitry.

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