NTJD4105CT4G Allicdata Electronics
Allicdata Part #:

NTJD4105CT4G-ND

Manufacturer Part#:

NTJD4105CT4G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N/P-CH 20V/8V SOT-363
More Detail: Mosfet Array N and P-Channel 20V, 8V 630mA, 775mA ...
DataSheet: NTJD4105CT4G datasheetNTJD4105CT4G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V, 8V
Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA
Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Base Part Number: NTJD4105C
Description

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The NTJD4105CT4G is a type of depletion mode MOSFET array that is widely used for power applications. It is composed of four transistors, each with its own drain, gate and source connections. The transistors are arranged in a half-bridge configuration so that they can be used to switch AC or DC power. This makes the device very versatile and suitable for a wide range of applications.

The NTJD4105CT4G is a popular choice for power applications because it has a high current capability and is able to efficiently switch AC and DC power. The device is also very reliable and is capable of switching power in both directions (Forward and Reverse). Additionally, the device is housed in a lead-free SO-8 package that is RoHS compliant. The device also features high speed, low noise and low gate charge.

The NTJD4105CT4G can be used in a variety of applications that require a high current capability and controlled switching of power. Examples of applications would include industrial AC and DC motor drives, light dimmers, DC-DC converters and automotive applications. The device can also be used for more specialized applications such as uninterruptible power supplies, switching power supplies, motor control applications and renewable energy systems.

The working principle of the NTJD4105CT4G is based on the movement of minority carriers between the gate, drain and source of the device. When a voltage is applied to the gate of the device, the majority carriers (electrons) move from the source to the drain and form an \'inversion layer\' near the gate. This causes the device to become \'on\' and allows current to flow from the drain to the source. When the voltage is removed, the majority carriers move back to the source, removing the \'inversion layer\' and turning the device \'off\'.

In summary, the NTJD4105CT4G is a MOSFET array device that is widely used for power applications. It is capable of switching both AC and DC power and is suitable for a wide range of applications. The device features a high current capability and low gate charge, making it an ideal choice for power-switching applications. Additionally, it is housed in a lead-free, RoHS compliant SO-8 package. The device operates on the principle of minority carrier movement between the gate, drain and source of the device, allowing it to switch power on and off.

The specific data is subject to PDF, and the above content is for reference

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