Allicdata Part #: | NTMFS5C442NLTT3G-ND |
Manufacturer Part#: |
NTMFS5C442NLTT3G |
Price: | $ 0.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 126A SO8FL |
More Detail: | N-Channel 40V 28A (Ta), 130A (Tc) 3.7W (Ta), 83W (... |
DataSheet: | NTMFS5C442NLTT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.43795 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Ta), 130A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.7W (Ta), 83W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
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The NTMFS5C442NLTT3G is an advanced field-effect transistor designed with the Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology. This type of transistor is one of the most commonly used in many different applications and fields, ranging from industrial equipment, power supplies, computers and even consumer electronics.
As a single MOSFET device, this transistor features a unique structure design for improved thermal and electrical characteristics. This type of transistor is also known for its strong immunity against static electrical charges and its low power dissipation requirements. Its drain-source breakdown voltage has a maximum rating of 30V and its maximum drain current has a rating of 3.2A.
The NTMFS5C442NLTT3G is primarily used in the switching application to control the voltage, current, and power levels of the connected apparatus. This type of transistor is also capable of controlling loads with steady state currents of up to 3.2A with an on-state resistance of 4.56 Ohms. This transistor also features capabilities that enable it to be used as a DC/DC converter.
The NTMFS5C442NLTT3G transistor works by using the principle of a “gate” and “drain” component. The gate terminal works by regulating the current flow from the drain terminal to the source. When a positive voltage is put on the gate terminal, the current flow from the drain terminal to the source is increased, thus enabling it to act as a switch for the connected load. When a negative voltage is put on the gate terminal, the current flow from the drain terminal to the source is reduced, thus acting as an “off” switch for the connected loads.
As a result, the NTMFS5C442NLTT3G transistor is an ideal device for further application in power supplies, battery management systems, computers, and industrial systems. It can also be used in many different applications, such as low voltage industrial motor controllers, low voltage digital electronic circuits, and other low voltage control applications.
The NTMFS5C442NLTT3G transistor is also a popular choice for use in audio amplifiers and other audio-related applications. This type of transistor is designed to achieve an exceptionally high weather and temperature resistance, making it an ideal choice for these kinds of noisy applications. Additionally, the NTMFS5C442NLTT3G transistor also features very low leakage currents, making it suitable for use in low power audio applications.
The NTMFS5C442NLTT3G transistor is highly versatile and capable of handling great amounts of power and current – making it suitable for use in high-frequency applications. It has high-frequency switching capabilities and low gate-to-drain capacitance, resulting in fast switching times, low conduction losses, and excellent turn-on characteristics. This makes it an ideal option for use in high-performance, high-frequency applications.
Overall, the NTMFS5C442NLTT3G is a versatile and efficient single MOSFET device capable of providing reliable performance in various applications and fields. Its advanced structure design is perfect for improved thermal and electrical characteristics, giving excellent reliability and superb performance no matter the application. It is also suitable for use in high-frequency applications due to its fast switching capabilities and low gate-to-drain capacitance. This makes the NTMFS5C442NLTT3G transistor one of the best available MOSFET devices for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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