Allicdata Part #: | NVATS4A103PZT4G-ND |
Manufacturer Part#: |
NVATS4A103PZT4G |
Price: | $ 0.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CHANNEL 30V 60A ATPAK |
More Detail: | P-Channel 30V 60A (Ta) 60W (Tc) Surface Mount ATPA... |
DataSheet: | NVATS4A103PZT4G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.40156 |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | ATPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2430pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 28A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVATS4A103PZT4G is a type of single Power MOSFET transistor. It is often applied across a wide range of applications due to its fast switching and high accuracy. As an important type of P-channel enhancement mode MOSFET, it can not only handle large currents but also provide low on-resistance and wide gate voltage swing. NVATS4A103PZT4G is a unique device that is manufactured using advanced process and provides high-performance on-resistance, low gate charge, and low gate-to-drain/source capacitance. In addition, due to its high-voltage platform, it is suitable for various advanced high-voltage applications.
NVATS4A103PZT4G has many different applications because of its unique characteristics. It can be used as a power switch in the form of “on-off” applications. It is also used in switching power components in order to protect circuits from short-circuits or other overload conditions, as well as for connecting key components in the circuitry. Besides, it is also applicable for telecommunication, industrial and automotive applications.
NVATS4A103PZT4G is also known for its working principle. It is a type of voltage-controlled FET, meaning it is operated by the applied voltage across its Gate Terminal. When the Voltage is applied, the depletionwidth increases or decreases, depending on the magnitude of the voltage. This process consequently increases or decreases the voltage between the Drain and Source terminals. It also allows the electrons to easily flow from the Drain to Source, thus increasing Drain Current and further reducing the resistance of the MOSFET.
In order to control the voltage, the Drain and Source terminals of NVATS4A103PZT4G must be connected with an appropriate bias voltage. This is because the NVATS4A103PZT4G works with a fixed Gate-to-Source voltage and the magnitude of the bias voltage will determine the resistance of the MOSFET. When such bias voltage is applied, the MOSFET will act as a normally open switch. On the other hand, when it is not applied, the MOSFET will act as a normally closed switch.
To sum it up, NVATS4A103PZT4G is a type of single Power MOSFET transistor that is widely used across a number of applications. It is specifically known for its fast switching, low on-resistance, wide gate voltage swing, low gate charge, and low gate-to-drain/source capacitance. Furthermore, it operates by the applied voltage across its Gate Terminal and its performance can be further improved by connecting it with an appropriate bias voltage.
The specific data is subject to PDF, and the above content is for reference
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