NVATS68301PZT4G Discrete Semiconductor Products

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NVATS68301PZT4G is a single N-channel powerMOSFET transistors with an extended voltage (VDSS) of 58 V and a drain current (ID) of 68A. It has a maximum total power dissipation (PD) of 411W and a thermal resistance (RθJA) of 35°C/W. It is a Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to control high-current and high voltage applications in a wide variety of industries.NVATS68301PZT4G transistors are used in a variety of applications, including home appliances, automotive, industrial, medical, and communications. For example, they can be used to control switching of high-voltage automotive engine loads, such as fuel injection and lighting systems, as well as in power supplies and motor control circuits. In industrial automation systems, NVATS68301PZT4G transistors can control crane operation, conveyor belt speed, and other high-power processes. In the medical field, the transistors are used to control the supply of oxygen in anaesthetic and medical device systems. In the communications field, NVATS68301PZT4G transistors are used in high-speed switching systems for Ethernet, FiberChannel, PCIe, and other high-speed protocols.The working principle of NVATS68301PZT4G transistors is based on the modulation of an electric field. The transistors can be turned on or off by applying a voltage to one of their terminals, called the gate. When voltage is applied to the gate, an electric field is created that attracts negatively charged carriers to the channel between the source and the drain, turning it on. When the gate voltage is removed, the electric field disappears and the channel between the source and the drain closes, turning off the transistor.The NVATS68301PZT4G transistors are designed to be able to handle high voltage and current applications, and can sustain long, high drain-to-source breakdown voltage (VDS) and DC drain current (ID) without saturation. Additionally, they have an excellent noise immunity characteristic, allowing them to reject noise, transients, and EMI. They are also designed to have a low gate charge, allowing them to respond quickly to signals and providing an efficient switching action.NVATS68301PZT4G transistors are an excellent choice for controlling high-power applications. They can handle high voltage and current, have an excellent noise immunity and low gate charge, and provide an efficient switching action. Additionally, they are designed to sustain long high drain-to-source breakdown voltage and DC drain current without saturation, making them suitable for applications in a wide variety of industries, such as home appliances, automotive, industrial, medical and communications.

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