NVD5C454NLT4G Discrete Semiconductor Products |
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Allicdata Part #: | NVD5C454NLT4GOSTR-ND |
Manufacturer Part#: |
NVD5C454NLT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | T6 40V DPAK EXPANSION AND |
More Detail: | N-Channel 40V 20A (Ta), 84A (Tc) 3.1W (Ta), 56W (T... |
DataSheet: | NVD5C454NLT4G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 70µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta), 84A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVD5C454NLT4G is a low-voltage and high-voltage dual-gate NMOS transistor intended for general-purpose analog switches and choppers. Manufactured by Panasonic and offered in a conventional 4-pin SOT-364 package, this device is a very good choice for low power applications as it provides an excellent combination of extremely low On-resistance and low gate charge characteristics. The NVD5C454NLT4G is a n-channel, enhancement mode field-effect transistor that utilizes a drain-source output current (ID) to activate its gate-source switched transistor actions.
This transistor has two gate electrodes — a low voltage and a high voltage — each gate terminals allow the gate–source voltage to become more negative during the switching operation in order to enhance the device\'s On-resistance characteristics. The drain-source current is inhibited to zero due to the series effect of the two gates, hence making this device particularly useful when working with small signals. Due to its fast switching speed, this device is also useful in applications that require high speed control.
In terms of its practical usage, the NVD5C454NLT4G is well suited to a wide range of applications, including driving small and medium power loads, controlling gate voltage for low voltage integrated circuits, and switching trees or small groups of switch networks. Its small gate charge characteristics couple with its low On-resistance to provide fast switching operation at low power dissipation, making it particularly ideal for VLSI and digital circuits.
In terms of its operating principle, when the voltage at the high voltage gate is made more negative, it stops the drain current from flowing. Since the drain current is inhibited, the On-resistance of the device is enhanced and the power dissipation of the device is reduced. The effective On-resistance of the NVD5C454NLT4G is almost independent of temperature and its low threshold voltage makes it ideal for low voltage applications. This device also has a high output impedance, making it particularly well suited for analog switches and choppers.
The NVD5C454NLT4G is a robust and reliable transistor featuring a low level off-state leakages. Its fast transition time makes it ideal for high speed switching applications. In terms of its durability, this device has an expected single-event gate limited lifetimes of greater than 1 million gates. This translates to a much longer lifetime than typical PMOS or NMOS transistors. Its simple and symmetrical pin layout allows for straightforward integration for consumers.
The NVD5C454NLT4G is an excellent choice for applications that require low power dissipation, low On-resistance, and fast switching. It is an inexpensive and highly reliable choice for integration into a variety of low voltage applications. It is especially well suited for applications that require small signal control, as well as for high speed control schemes.
The specific data is subject to PDF, and the above content is for reference
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