Allicdata Part #: | NVMFS5C645NLWFT3G-ND |
Manufacturer Part#: |
NVMFS5C645NLWFT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V DFN5 WETTABLE |
More Detail: | N-Channel 60V 22A (Ta) 79W (Tc) Surface Mount 5-DF... |
DataSheet: | NVMFS5C645NLWFT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 79W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN, 5 Leads |
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NVMFS5C645NLWFT3G is a type of single field effect transistor (FET) that is mainly used in analog circuits, audio amplifiers, and related applications. This type of transistor works on the principle of MOSFET (metal-oxide-semiconductor field-effect transistor) technology, which is based on a voltage-driven insulated gate. The use of the NVMFS5C645NLWFT3G transistor allows for a dual function of amplification and switching in a very wide range of applications, including switches, output buffers, power amplifiers, voltage followers, and charge pumps.The device itself is mainly composed of a n-type source, a p-type drain, and an insulation layer between them known as a gate oxide. This oxide layer is responsible for creating an insulating layer that separates the two electrodes, allowing for current to flow through the device in a controlled manner. The amount of current flowing through the transistor is primarily determined by the applied gate voltage, which is what allows the device to act as a voltage-controlled switch.The switching behavior of the NVMFS5C645NLWFT3G device is characterized by a linear transfer characteristic, in which the drain current is proportional to the gate voltage. This linearity of the device allows for very precise control over the drain current, providing a very good frequency response and dynamic power management capabilities. This makes the device ideal for applications such as audio amplifiers, switches, and other high-speed circuitry.In addition, the device is also very reliable and efficient, providing fast switching speeds and low power consumption. The NVMFS5C645NLWFT3G is available in surface mount and through-hole packages, which makes it well suited for use in a wide variety of applications. Furthermore, the device also includes built-in protection against electrostatic discharge (ESD) as well as short-circuit protection, making it even more reliable.Overall, the use of the NVMFS5C645NLWFT3G single field effect transistor is well suited for a wide range of analog applications, including audio amplifiers, switches, output buffers, and other high-speed circuitry. This type of device provides an excellent linear transfer characteristic, enabling precise control of the drain current. Furthermore, the device is also very reliable and efficient, providing fast switching speeds and low power consumption. Thanks to its versatile design, the NVMFS5C645NLWFT3G single field effect transistor is an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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