NVTFS5C658NLWFTAG Allicdata Electronics

NVTFS5C658NLWFTAG Discrete Semiconductor Products

Allicdata Part #:

NVTFS5C658NLWFTAGOSTR-ND

Manufacturer Part#:

NVTFS5C658NLWFTAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 109A 8WDFN
More Detail: N-Channel 60V 109A (Tc) 114W (Tc) Surface Mount 8-...
DataSheet: NVTFS5C658NLWFTAG datasheetNVTFS5C658NLWFTAG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 114W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1935pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NVTFS5C658NLWFTAG, is a common type of transistor used in many electronic applications. It is a small device consisting of three terminals; source, gate, and drain. It is considered to be a single FET (Field Effect Transistor).

The NVTFS5C658NLWFTAG is a versatile device which can be used in many different applications, depending on the specific type of application and its associated requirements. Some common applications include switching, amplifying and even signal buffering and shaping.

The working principle of a FET is relatively simple. When a voltage is applied to the gate terminal, a thin layer of silicon dioxide or dielectric layer is formed, forming an electric field. This electric field affects the movement of electrons, which then can be controlled. This is done by varying the amount of voltage applied at the gate, thus controlling the number of electrons that are moved across the thin layer of silicon dioxide.

In general, NVTFS5C658NLWFTAG is able to provide fast switching and good speed-power characteristics at an attractive price. Moreover, it has a wide variety of features and characteristics, including low on-resistance, high current density and low gate-to-source capacitance, which makes it suitable for applications like digital switch matrices, gate drivers, and circuit protection.

NVTFS5C658NLWFTAG can be used in a variety of applications. For example, it can be used in automotive applications such as engine control, power steering, and transmission control. It can also be used in communications, audio power amplifiers, power supplies, and power management.

In summary, NVTFS5C658NLWFTAG is a single FET (Field Effect Transistor) which can be used in many different applications. Its working principle is relatively simple, being able to provide fast switching, good speed-power characteristics, and low gate-to-source capacitance. It is an attractive device with a wide variety of features and characteristics which make it suitable for many applications.

The specific data is subject to PDF, and the above content is for reference

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