NVTFS5C658NLWFTAG Discrete Semiconductor Products |
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Allicdata Part #: | NVTFS5C658NLWFTAGOSTR-ND |
Manufacturer Part#: |
NVTFS5C658NLWFTAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 109A 8WDFN |
More Detail: | N-Channel 60V 109A (Tc) 114W (Tc) Surface Mount 8-... |
DataSheet: | NVTFS5C658NLWFTAG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 114W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1935pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 109A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVTFS5C658NLWFTAG, is a common type of transistor used in many electronic applications. It is a small device consisting of three terminals; source, gate, and drain. It is considered to be a single FET (Field Effect Transistor).
The NVTFS5C658NLWFTAG is a versatile device which can be used in many different applications, depending on the specific type of application and its associated requirements. Some common applications include switching, amplifying and even signal buffering and shaping.
The working principle of a FET is relatively simple. When a voltage is applied to the gate terminal, a thin layer of silicon dioxide or dielectric layer is formed, forming an electric field. This electric field affects the movement of electrons, which then can be controlled. This is done by varying the amount of voltage applied at the gate, thus controlling the number of electrons that are moved across the thin layer of silicon dioxide.
In general, NVTFS5C658NLWFTAG is able to provide fast switching and good speed-power characteristics at an attractive price. Moreover, it has a wide variety of features and characteristics, including low on-resistance, high current density and low gate-to-source capacitance, which makes it suitable for applications like digital switch matrices, gate drivers, and circuit protection.
NVTFS5C658NLWFTAG can be used in a variety of applications. For example, it can be used in automotive applications such as engine control, power steering, and transmission control. It can also be used in communications, audio power amplifiers, power supplies, and power management.
In summary, NVTFS5C658NLWFTAG is a single FET (Field Effect Transistor) which can be used in many different applications. Its working principle is relatively simple, being able to provide fast switching, good speed-power characteristics, and low gate-to-source capacitance. It is an attractive device with a wide variety of features and characteristics which make it suitable for many applications.
The specific data is subject to PDF, and the above content is for reference
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