P-15KP66CA

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TVS (Transient Voltage Suppression) diodes are designed to withstand sudden, short-term or transient voltage fluctuations. They are commonly used in telecom, computer and audio/video equipment. The P-15KP66CA is a low-capacitance, high-speed TVS diode that can be used to protect circuits from ESD (electro-static discharge), EFT (electrical fast transients), and lightning surges.

TVS diodes, such as the P-15KP66CA, are designed to protect circuits from a range of overvoltage conditions. They are capable of absorbing large amount of energy and have a short recovery time. The P-15KP66CA has a maximum peak pulse power of 150W, with a breakover voltage (VBO) of 15V. It is suited for applications that require higher transient protection while still providing low capacitance.

The main application field for the P-15KP66CA TVS diode is in data line protection. It is designed to protect USB, Ethernet, telecommunications, and other sensitive data lines from damage due to ESD, EFT, and lightning strike occurrences. To determine whether the P-15KP66CA is suitable for your application, it is important to consider the maximum peak power of the device and the surge voltage of your application.

The P-15KP66CA\'s working principle is based on the breakdown of PN junction. When a surge current passes through the device, it causes a sharp increase in reverse voltage across the diode. This results in a breakdown of the PN junction, allowing current to flow through the device. The P-15KP66CA is designed to have sufficient clamping voltage that can withstand high surge currents, while still providing low capacitance and low clamping voltage.

In summary, the P-15KP66CA TVS diode is designed to provide protection for sensitive data lines from ESD, EFT, and lightning surges. It has a maximum peak pulse power of 150W, and a breakover voltage of 15V. It is capable of absorbing large amounts of energy and has a short recovery time. Its main application field is in data line protection, and its working principle is based on the breakdown of PN junction.

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