PBLS6022D,115 Allicdata Electronics
Allicdata Part #:

1727-2378-2-ND

Manufacturer Part#:

PBLS6022D,115

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP PREBIAS/PNP 6TSOP
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Bias...
DataSheet: PBLS6022D,115 datasheetPBLS6022D,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.09277
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 PNP Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 1.5A
Voltage - Collector Emitter Breakdown (Max): 50V, 60V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 140 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 260mV @ 100mA, 1.5A
Current - Collector Cutoff (Max): 1µA, 100nA
Frequency - Transition: 150MHz
Power - Max: 760mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Description

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The PBLS6022D,115 is a Pre-Biased Bipolar Junction Transistor (BJT) array, with two NPN transistors and a PNP transistor each. It is designed to provide an ideal solution for applications that require several identical transistor circuits, such as general purpose amplification, switching, and signal conditioning. The PBLS6022D,115 is designed to use a small amount of power while providing long operating life and reliable performance.

The PBLS6022D,115 has a collector-emitter voltage rating of 50 volts and a peak collector current of 500 mA, with a maximum power dissipation of 1.3 W. The output characteristics of the device, such as the open circuit voltage, collector current and breakdown voltage, are all specified in order to ensure the proper operation and the ideal performance of the device. The PBLS6022D,115 also features built-in NPN and PNP diodes, allowing it to provide protection from reverse and overvoltage conditions.

The PBLS6022D,115 is a type of Pre-Biased BJT arrays, which means that the device is preset to a specific bias state at the time of manufacture. This allows the transistors to quickly switch between states without any additional circuitry, making it ideal for applications that need to quickly switch between states. The Pre-Biased BJT arrays are also capable of operating with very low current levels, typically around microamps, meaning that the device consumes minimal power and is ideal for battery operated systems.

The working principle of the PBLS6022D,115 can be summarized as follows: first, an input signal is supplied to the bases of the NPN transistors, which generates an amplified output signal at the states of the collector and emitter. The PNP transistors then receive the amplified output signal and similarly amplify it. This creates a larger output signal with higher levels of current, allowing the system to react to external signals faster by controlling the current flow.

The PBLS6022D,115 is a versatile device and can be used in a wide variety of applications. It is commonly used in systems which require high-speed switching or signal processing, such as RF amplifiers, audio amplifiers, and motor control systems. The device can also be used for general purpose switching applications, such as lighting and industrial automation systems. The PBLS6022D,115 also has a wide range of operating temperature range, from -55°C to 125°C.

In summary, the PBLS6022D,115 is an ideal solution for applications which require several identical transistor circuits. The device is pre-biased for quick switching between states and has a wide operating range, making it suitable for many applications. The device is also capable of consuming minimal power and providing reliable performance, making it a cost-effective solution for many applications.

The specific data is subject to PDF, and the above content is for reference

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