| Allicdata Part #: | 1727-1196-2-ND |
| Manufacturer Part#: |
PBSS4350D,135 |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | TRANS NPN 50V 3A 6TSOP |
| More Detail: | Bipolar (BJT) Transistor NPN 50V 3A 100MHz 750mW S... |
| DataSheet: |  PBSS4350D,135 Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.05024 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 3A |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 290mV @ 200mA, 2A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 2A, 2V |
| Power - Max: | 750mW |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-74, SOT-457 |
| Supplier Device Package: | 6-TSOP |
| Base Part Number: | PBSS4350 |
Description
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The PBSS4350D is a single bipolar junction transistor (BJT) designed for use in low voltage, low current applications. It has grown to become one of the most commonly used transistors in modern electronics. It is a very useful type of transistor because of its low cost, wide availability, and high performance. According to the datasheet, the PBSS4350D is a single transistor that is capable of supplying a current up to 135 mA. Its collector-emitter voltage is rated at 60 V and its maximum operating temperature is between -55 °C to +125 °C.The PBSS4350D can be used in a variety of applications. It is commonly used as an amplifier or switch. It can be used as an amplifier to increase the gain of a signal, or as a switch to turn on or off the current flow in a circuit. It can also be used in logic circuits to provide logic control functions.The working principle of the PBSS4350D is based on the operation of a BJT. It consists of three distinct layers, each with their own electrical properties. The base layer is the control element, and it consists of a narrow strip of p-type semiconductor material. This layer is in contact with two more layers, the emitter and collector, which are composed of n-type material.When a small voltage is applied to the base layer, it creates an electric field that attracts current carriers (electrons or holes) from the emitter or collector layer. This current flow then provides the necessary power for any circuit connected to the transistor. In addition, the operation of the transistor is affected by the ratio of the current flows between the layers.The PBSS4350D is an excellent choice for many applications because of its low cost, wide availability, and good performance. Its three layers are designed to optimize the operation of the transistor and to minimize power consumption. It is a great choice for switching and amplifying signals in low-voltage, low-current logic circuits.
The specific data is subject to PDF, and the above content is for reference
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