Allicdata Part #: | PDI-M305-ND |
Manufacturer Part#: |
PDI-M305 |
Price: | $ 0.00 |
Product Category: | Sensors, Transducers |
Manufacturer: | Luna Optoelectronics |
Short Description: | PHOTO DIODE HI SPEED SILICON TO8 |
More Detail: | Photodiode 900nm 12ns TO-233AA, TO-8-3 Lens Top M... |
DataSheet: | PDI-M305 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Wavelength: | 900nm |
Color - Enhanced: | -- |
Spectral Range: | 400nm ~ 1150nm |
Diode Type: | -- |
Responsivity @ nm: | 0.45 A/W @ 1060nm |
Response Time: | 12ns |
Voltage - DC Reverse (Vr) (Max): | 75V |
Current - Dark (Typ): | 100nA |
Active Area: | 17.3mm² (x4) |
Viewing Angle: | -- |
Operating Temperature: | -40°C ~ 100°C |
Mounting Type: | Through Hole |
Package / Case: | TO-233AA, TO-8-3 Lens Top Metal Can |
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Photodiodes are a common type of optical sensors used to detect and reconfigure light. They are composed of both electrical and optical components, such as an active layer of a semiconductor material, a photodiode substrate, and connecting electrodes. The semiconductor layer is sensitive to light, and when light strikes the photodiode’s active material it creates an electrical current. This current can then be used to measure and detect the level of light in the environment.
The PDI-M305 is a type of photodiode specifically designed for use in medical radiation therapy, nuclear instrumentation, and industrial gas detection. It is a p-i-n photodiode, meaning that it consists of a p-type semiconductor layer, an i-type layer, and an n-type semiconductor layer. This P-i-n semiconductor configuration is sensitive to both UV and visible light, while also providing excellent radiation stability and high sensitivity levels. Additionally, the PDI-M305’s quick response time and low dark-signal noise make it a popular choice for medical, industrial, and scientific applications.
When using the PDI-M305, a light source such as a laser is directed towards the photodiode. The light passes through the semiconductor layers and creates a current which can be measured by a pair of electrodes. Depending on the application, this current signal is then used to trigger an action, or can be further processed and analyzed. In medical radiation therapy applications, for example, the PDI-M305 is used to detect a source radiation beam, and measure the beam’s energy. In industrial gas detectors, the PDI-M305 is used to sense the presence of flammable gases in the environment.
The working principle of of the PDI-M305 is based on the photovoltaic effect. When light strikes the p-i-n semiconductor layers of the PDI-M305, electron-hole pairs are created. These electron-hole pairs are then collected by the electrodes, and the resulting current is measured. This current can then be used to trigger an event, or provide an input signal for further processing and analysis.
The surface area of the PDI-M305 is very small, making it well-suited for applications with limited space. Additionally, the PDI-M305 can be sealed and reliably thermally hardened for environmental protection. These features make the PDI-M305 an ideal choice for harsh environments or extreme temperature conditions.
In conclusion, the PDI-M305 is a photodiode designed for medical radiation therapy, nuclear instrumentation, and industrial gas detection. The integrated p-i-n semiconductor configuration is highly sensitive to both UV and visible light, and also provides excellent radiation stability and high sensitivity levels. This device is well-suited for applications with limited space, and can be easily sealed and thermally hardened for environmental protection.
The specific data is subject to PDF, and the above content is for reference
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