PDTC124XU,115 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	1µA
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323-3
Base Part Number:	PDTC124

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PDTC124XU,115 is a pre-biased single bipolar junction transistor (BJT). It is a type of transistor which has three connections, the base, collector and emitter. It works by allowing current through the base-emitter junction when the base is given the right amount of voltage. This current then amplifies to a greater current through the base-collector connection when the base is given an additional voltage. This amplified current is used to control the current between the collector and the emitter. The PDTC124XU,115 is a PNP transistor designed for general purpose switching and general amplification. It is made from silicon material and is housed in a Standard Plastic package. Its allowance for a maximum of 1A collector current and 100V collector-emitter voltage and is rated for 45V maximum DC collector currect and 0.5 Watts power dissipation. Using the PDTC124XU,115 in an application helps use less power and increase reliability while also increasing the switching speed. This small, simple transistor can be used to power small amplifiers, as an on/off switch, and as a driver for LEDs or motors. It is commonly used in amplifiers, power supplies, switching power converters, local area networks, and logic operations.The working principle of the PDTC124XU,115 is based on the ability to control the current that flows between the emitter and the collector when the base voltage is varied. In PNP transistors, the base current is negative, which means that when the base voltage is high, less current will flow, and when the base voltage is lowered, more current will flow. The amount of current that can pass through the collector to the emitter of a BJT is determined by the current gain, which is hFE in the case of a PDTC124XU,115. hFE is the ratio of collector current over the base current, and is typically between 500 and 700. The PDTC124XU,115 also has an important feature called Pre-Biasing, which means it starts with an existing bias voltage so that even if the base voltage is close to zero, it will start to show the effects of collector current amplification. Pre-Biasing the PDTC124XU,115 helps to reduce production time, reduce component count, and give better switch on-off ratio. In conclusion, the PDTC124XU,115 is a pre-biased single bipolar junction transistor (BJT) which is used in general purpose switching, amplifying and motor/LED driving tasks. It works on the principle of controlling the current between the emitter and collector when the base voltage is varied and has a current gain of hFE, which is typically between 500 to 700. Pre-Biasing the PDTC124XU,115 helps lower component count and reduce production time.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description