PIMN31,115 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	1 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	--
Power - Max:	420mW
Mounting Type:	Surface Mount
Package / Case:	SC-74, SOT-457
Supplier Device Package:	6-TSOP
Base Part Number:	PIMN31

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction
PIMN31,115 is a bipolar junction transistor array, pre-biased to improve performance, and offer higher power density. It is uniquely designed to save space and provide excellent system performance and robustness. The array includes a PNP emitter, an NPN emitter, and an array of fifteen low-cost, low-thermal-resistance, NPN transistors for transistor-level implementation of logic gates and high-power transistors for power amplifier applications.

Application Field and Working Principle
PIMN31,115 has a wide range of applications in consumer, automotive, and industrial applications. The array can be used for the implementation of logic gates, power H-bridge motor control, LED drivers, amplifier stages, etc. The pre-bias capability allows the device to be used as a pre-driver for high voltage power management (HVPM) applications.

Working Principle : The PIMN31,115 array is a type of flip-flop pre- biased structure, which includes a PNP emitter, NPN emitter, and fifteen NPN transistors. The array is pre-biased in the forward direction by the NPN emitter, which helps to increase the breakdown voltage and reduce the on-state voltage drop. When the voltage is applied to the gate of the NPN emitter, the voltage is divided between the collector and the gate, and the current is increased through the transistor, increasing the collector current. The increased collector current will also cause more current to be passed through the other transistors in the array.

Features
The PIMN31,115 array offers several benefits for applications requiring high performance. These include :

1. High Junction Temperature : The pre-bias of the array allows for a high junction temperature, making it reliable for use in high-temperature environments.

2. High Speed : The array can operate at speeds up to 1 MHz, making it suitable for high-speed applications.

3. High Output Power : The array can also be used in power amplifier applications, providing up to 3 Watts of output power.

Conclusion
The PIMN31,115 is a unique, pre-biased bipolar junction transistor array with a wide range of applications in various consumer, automotive, and industrial applications. The array offers high junction temperature, high speed, and high output power, making it an ideal choice for high-performance applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description