PMBFJ111,215 Allicdata Electronics
Allicdata Part #:

568-6480-2-ND

Manufacturer Part#:

PMBFJ111,215

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: JFET N-CH 40V 0.3W SOT23
More Detail: JFET N-Channel 40V 300mW Surface Mount SOT-23 (TO...
DataSheet: PMBFJ111,215 datasheetPMBFJ111,215 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Resistance - RDS(On): 30 Ohms
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)
Base Part Number: MBFJ111
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors are essential components in modern electronics, from computers to smartphones and from medical devices to satellites. The most common and widely used type of transistor is the junction field effect transistor, or JFET. PMBFJ111,215 is a specific model of JFET.

JFETs are unipolar transistors, meaning the device only operates with one type of charge carrier (electrons). They are three-terminal devices with the gate and two other terminals, the source, and the drain. The main difference between a JFET and a bipolar transistor is that the current flow in a JFET is controlled by an involuntary electric field instead of an applied current, making them more suitable for applications where a voltage-controlled (rather than current-controlled) device is needed.

A simplified diagram of the PMBFJ111,215 structure is shown in the figure below:

PMBFJ111,215

JFETs have several advantages over other types of transistors. JFETs have very high input impedance, low noise levels, high bandwidth, and high linearity. They are also simpler to use and require fewer external components than other types of transistors, making them attractive for a wide variety of applications.

JFETs operate in three different modes, each with its own advantages and disadvantages: the common-source, common-gate, and common-drain modes. The PMBFJ111,215 can be used in either the common-source or the common-drain mode. In common-source mode, the source is connected to a reference voltage, and the gate and drain are connected respectively to the input and output. In common-drain mode, the drain is connected to the reference voltage, and the source and gate are connected respectively to the input and output.

PMBFJ111,215 is a popular model of JFET because of its high linearity and low signal distortion. It has a wide range of applications, including amplifiers, signal processors, signal conditioning, analog-to-digital conversion, frequency control, low-power signal switching, and motor control. This makes it suitable for a wide array of industrial, commercial, and consumer electronics applications.

The working principle of the PMBFJ111,215 is simple. The voltage applied between the gate and the source or between the gate and the drain will modulate the current flowing through the device. This modulation is caused by a change in the electric field at the junction, which affects the flow of electrons from the source to the drain. The amount of current flowing through the device can be accurately controlled by changing the voltage applied to the gate.

In conclusion, PMBFJ111,215 is a popular and versatile model of JFET. Its high input impedance, low noise levels, simplicity, and wide range of applications make it attractive for many different kinds of electronics applications. Its working principle is simple, and its performance is reliable and accurate.

The specific data is subject to PDF, and the above content is for reference

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