PMBT3906,215 Allicdata Electronics
Allicdata Part #:

1727-2960-2-ND

Manufacturer Part#:

PMBT3906,215

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 40V 0.2A SOT23
More Detail: Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 250m...
DataSheet: PMBT3906,215 datasheetPMBT3906,215 Datasheet/PDF
Quantity: 12000
3000 +: $ 0.01414
6000 +: $ 0.01275
15000 +: $ 0.01109
30000 +: $ 0.00998
75000 +: $ 0.00887
150000 +: $ 0.00739
Stock 12000Can Ship Immediately
$ 0.01
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: PMBT3906
Description

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The PMBT3906,215 is a general purpose PNP Bipolar Junction Transistor (BJT). This device is specially designed for use in medium to high current applications, particularly those that require unmatched reliability and high-voltage operation. The PMBT3906,215 has an exceptionally wide NPN and PNP device family which makes it ideal for use in a variety of applications such as power identification and switching, high-side switching, low-current device control and amplification, and high-level signal detection. The PMBT3906,215 offers impressive performance characteristics including 140V breakdown voltage, 15A collector current and a 30V collector-emitter voltage rating. In addition, the PMBT3906,215 has an improved drift rate, allowing it to maintain excellent transistor operation over a wide range of temperature ranges.

The primary function of the PMBT3906,215 is to act as a current switch between two voltage sources. This is achieved by turning the transistor on and off to control the current flow through the device. This is accomplished through the use of gate currents and base-emitter voltages. When the gate current matches the base-emitter voltage, the transistor is turned on and allows current to flow through the device. When the gate current falls below the base-emitter voltage, the transistor is turned off, preventing the current from flowing through the device.

Another application of the PMBT3906,215 is in high-current switching, where it is often used to control power in a circuit. The device contains a built-in diode, which allows it to provide protection against transient voltage spikes. This diode helps to ensure that the voltage is never exceeded during switching operations, further adding to the reliability of the transistor.

Finally, the PMBT3906,215 can be used in high-level signal detection. By adjusting the gate voltage, it is possible to detect the presence of a signal even when it is very small in magnitude. This provides an effective and reliable means for detecting small signals, which is often essential for many electronic applications.

The PMBT3906,215 is an ideal choice for a variety of medium to high current applications. Its wide range of features, such as its built-in diode and impressive performance characteristics, make it an ideal choice for reliable and high-level signal detection. The transistor\'s wide range of characteristics make it suitable for use in a range of different applications, including power identification and switching, high-side switching, low-current device control and amplification, as well as high-level signal detection. All in all, the PMBT3906,215 is an ideal choice for many medium to high current applications.

The specific data is subject to PDF, and the above content is for reference

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